Chemical vapour deposition-new prospective possibilities

• Autorzy: Sobiecki J.R. , Wierzchoń T.
• Języki publikacji: EN

Abstrakty

EN

The prospects of the further development of CVD methods lie in the use of organic compounds as the source of the element that forms the surface layers in place of halides commonly used till now and in the electrical activation of the gaseous mediums containing precursors of chemical reactions guaranteed the formation of surface layers. The present state of aft of CVD processes is presented in the paper. The new direction of development especially the use of metalorganic donors and the electrical activation of chemical reaction is discussed. The paper also presents the results of formation of titanium oxicarbonitride on magnesium alloy at low temperature of 200°C. The surface Ti(N,C,O) layers have a high hardness and good wear resistance.

Słowa kluczowe

EN

CVD processes; titanium oxicarbonitride; chromium nitride; metalorganic precursors

• Wydawca: Politechnika Gdańska
• Czasopismo: Advances in Materials Science
• Rocznik: 2007
• Tom: Vol. 7, nr 2(12)
• Strony: 308--318
• Opis fizyczny: Bibliogr. 37 poz., rys., tab.

Twórcy

autor

Sobiecki J.R.

autor

Wierzchoń T.

• Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw, Poland

Bibliografia

• [l] Choy K.L. Handbook of nanostructured materials and nanotechnology vol. l Synthesis and Processing Editor Nalwa H.S. San Diego Academic Press (2000) p. 533.
• [2] Scheib M., Schroder B., Oechsner H.Y., J. Non-Cryst. Solids (1996), 200, p.895.
• [3] Dehbi-Alaoui, A.Vacuum (1995), 46, p.l305.
• [4] Stringfellow G.B, Organomettalic vapour phase epitaxy theory and practise San Diego (CA) Academic Press 1989.
• [5] Dupuis RD., Ed. D.A. Glocker, S.I. Shah, Handbook of thin film process technology Bristol (UK) 1995.
• [6] Horikoshi Y., Minggawa S., J. Crystal Growth, 145, (1994), p.1.
• [7] Egawa T., Ishikawa H., Jimbo T., Unemo M., Buli. Mater. Sci. 22 (2000), 363.
• [8] Anderson P.L., Erbil A., Nelson C.R, Tompa G.S., Moy K., J. Crystal Growth, 135, (1994) p.383.
• [9] Sugiura L., Shigendka K., Nakata F., Hirahara K., J. Crystal Growth, 145 (1994), p. 547.
• [10] Fujita S., J. Crystal Growth, 145 (1994) p. 552.
• [11] Manasevit H.M., Simpson W.. J. Electrochem. Soc. 122 (1975) p. 444.
• [12] Jones A.C., Alud J., Rushworth S.A., Critchow G.W., J. Crystal Growth, 135, (1994) p. 285
• [13 Stall R.A., Wolak E., Zawadsky P., Mat. Res. Soc. Syrop. Proc. 282 (1992) p. 115.
• [14] Erbie A., Braun W., Zwak B.S., Wilkens B.S., Boatner LA., Budai J.D., l Crystal Growth 24 (1992) p. 84.
• [15] Tominaga K., Sakashita Y., Nakashima H., Ada M., J. Crystal Growth, 145 (1994) p. 219.
• [16] Kumar N.D., Kalamasanan M.N., Chandra S., Appl. Phys. Lett. 65, (1994) p.1373
• [17] Sugimoto T., Yoshida M., Yamaguchi K, Hamada Y., Sugawara K., Shirohara Y., J. Crystal Growth, 107, (1991) p. 692.
• [18] Sant C., Gibart P., Genou P., Verie C., J. Crystal Growth, 124 (1992) 690.
• [19] Advertisement at: Industry R&D Division Danish Technological Institute.
• [20] Weyten H., Fransen G., Kemps R., Buekenhoudt A., Cornelis J., Physica C 270 (1996) p.207.
• [21] Lim D.C., Chen G.C., Lee S.B., Boo J.H., Surface and Coatings Technology 163-164 (2003) p.318.
• [22 Lim D.C., Chen G.C., Boo J.H., Surface and Coatings Technology 171 (2003) p.101.
• [23] Lim D.C., Kang B.C., Moon J.S., Moon O.M., Park J.H., Jee H.G., Lee S.B., Kim Y.H., Lee J.Y., Boo J.H., Surface and Coatings Technology 193 (2005) p.162.
• [24] Park J.H., Yung C.K., Lim D.C., Boo J.H., Tribology International 40 (2007) p. 345.
• [25] Rie K.T., Gebauer A., Whole J., Surface and Coatings Technology 74-75 (1995) p. 362.
• [26] Luithardt W., Benndorf C., Diamond and Related Materials 4 (1995) p. 346.
• [27] Luithardt W., BenndorfC., Diamond and Related Materials 6 (1997) p. 533.
• [28] Dasgupta A., Kuppusami P., Lawrence F., Raghunathan V.S., Premkumar P.A., Nagaraja K.S., Materials Science and Engineering A 374 (2004) 362.
• [29] Dasgupta A., Premkumar P.A., Lawrence F., Houben L, Kuppusami P., Luysberg M., Nagaraja K.S., Raghunathan V.S., Surface and Coatings Technology 201 (2006) p.1401.
• [30] Premkumar P.A., Kuppusami P., Dasgupta A., Mallika C., Nagaraja KS., Raghunathan V.S., Materials Letters 61 (2007) p. 50.
• [31] Sobiecki J.R., Wierzchoń T., Journal de Physique IV, Vo1.5, 1995, C5 p. 339.
• [32] Sobiecki J.R., Wierzchoń T., Kułakowska - Pawlak B., Żernicki W., J. Mat. Sci. Lett, 15, (1995), p.159.
• [33] Wierzchoń T., Sobiecki J.R., Surface and Coatings Technology 98, (1998), p.1455.
• [34] Sobiecki J.R., Wierzchoń T., Proc. 15th International Symposium on Plasma Chemistry Orlean France (ed. A. Bouchoule, J.M. Pauvesle et al Gremi CNRS) July 2001 vol5 p.1977.
• [35] Sobiecki J.R., Mańkowski P., Wierzchoń T., Vacuum 68 (2003) p.105.
• [36] Polish Standard PN- 83/H - 04302, (1983).
• [37] Wierzchoń T., Sobiecki J.R., Mańkowski P., Trojanowski J., Proc. 3 International Conference on Surface Engineering, October 10-13 2002, Chengdu, China p.333.