Defect states in the GIGS solar cells by photocapacitance and deep level optical spectroscopy

• Autorzy: Igalson M. , Urbaniak A.
• Języki publikacji: EN

Abstrakty

EN

Thin film solar cells based on multinary compound Cu(In,Ga)Se2 show record photovoltaic conversion efficiency approaching 20%. Investigation on defect physics in this compound is crucial for making further progress in the technology. In this work we present the results on photo capacitance (PC) and deep level optical spectroscopy (DLOS) for two types of cells high efficiency Cu(In,Ga)Se2 cell with about 20% of gallium and pure gallium CuGaSe2 device. We show that PC and DLOS, employed as the techniques complimentary to deep level transient spectroscopy DLTS and admittance spectroscopy, are useful methods in providing information on defect levels in solar cells. In particular they are helpful in differentiating between levels belonging to the bulk of absorber and to the interface states. We tentatively assign some of the observed deep levels to Incu or Gacu antisites and Cu interstitials.

Słowa kluczowe

EN

solar cells; GIGS; photocapacitance; deep levels

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2005
• Tom: Vol. 53, nr 2
• Strony: 157--161
• Opis fizyczny: Bibliogr. 18 poz., 6 rys.

Twórcy

autor

Igalson M.

autor

Urbaniak A.

• Faculty of Physics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland.,

Bibliografia

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