High power QW SCH InGaAs/GaAs lasers for 980-nm band

• Autorzy: Bugajski M. , Mroziewicz B. , Regiński K. , Muszalski J. , Kosiel K. , Zbroszczyk M. , Ochalski T. , Piwoński T. , Wawer D. , Szerling A. , Kowalczyk E. , Wrzesińska H. , Górska M.
• Języki publikacji: EN

Abstrakty

EN

Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980-nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the order of Jth = 280 A/cm2 (for the resonator length L = 700 [mu]m) and differential efficiency [eta]= 0.40 W/A (41%) from one mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations of above parameters, obtained by numerical modelling of devices were Jth = 210 A/cm and [eta] = 0.47 W / A from one mirror, respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation after 1500 hrs of CW operation at 35°C heat sink temperature at the constant optical power (50 mW) conditions.

Słowa kluczowe

EN

laser diodes; strained-layer semiconductor lasers

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2005
• Tom: Vol. 53, nr 2
• Strony: 113--122
• Opis fizyczny: Bibliogr. 35 poz., 7 rys.

Twórcy

autor

Bugajski M.

autor

Mroziewicz B.

autor

Regiński K.

autor

Muszalski J.

autor

Kosiel K.

autor

Zbroszczyk M.

autor

Ochalski T.

autor

Piwoński T.

autor

Wawer D.

autor

Szerling A.

autor

Kowalczyk E.

autor

Wrzesińska H.

autor

Górska M.

• Institute of Electron Technology 32/46 Lotnik6w Ave., 02 668 Warszawa, Poland.,

Bibliografia

• [1] P. Derry and A. Yariv, “Ultralow-threshold graded-index separate-confinement singlequantum well burried heterostructure (Al,Ga)As lasers with high reflectivity coatings”, Appl. Phys. Lett. 50, 1773 (1987).
• [2] W.T. Tsang, “Extremely low threshold (Al,Ga)As modified multiquantum well heterostructure lasers grown by molecular beam epitaxy”, Appl. Phys. Lett. 39, 786 (1981).
• [3] K. Prosyk, J.G. Simmons and J.D. Evans, “Well number, length, and temperature dependence of efficiency and loss in InGaAsP-InP compressively strained MQW ridge wavequide lasers at 1.3 ¹m”, IEEE J. Quantum Electron. QE-33, 1360 (1997).
• [4] K. Prosyk, J.G. Simmons and J.D. Evans, “A systematic empirical study of the well number and length on the temperature sensitivity of the threshold current in InGaAsP-InP MQW lasers”, IEEE J. Quantum Electron. QE-34, 535 (1998).
• [5] P.W.A. Mc Ilroy, A. Kurobe and Y. Uematsu, “Analysis and application of theoretical gain curves to the design of multi-quantum well lasers”, IEEE J. Quantum Electron. QE-21, 1958 (1985).
• [6] A. Kurobe, H. Furuyama, S. Naritsuka, N. Sugiyama, Y. Kokubun and M. Nakamura, “Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers”, IEEE J. Quantum Electron. QE-24, 635 (1988).
• [7] J.Z. Wilcox, G.L. Peterson, S. Ou, J.J. Yang, M. Jansen and D. Schechter, “Gain- and threshold-current dependence for multiple-quantum well lasers”, J. Appl. Phys. 64, 6564 (1988).
• [8] S.P. Cheng, F. Brillouet and P. Correc, “Design of quantum well AlGaAs-GaAs stripe lasers for minimization of threshold current-Application to ridge structures”, IEEE J. Quantum Electron. QE-24, 2433 (1988).
• [9] M. Rosenzweig, M. Mohrle, H. Duser and H. Venghaus, “Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers”, IEEE J. Quantum Electron. QE-27, 1804 (1991).
• [10] H.C. Casey and Jr., M.B. Panish, Heterostructure Lasers, Academic Press, New York, 1978.
• [11] T. Strite and G. Hoven, “Trends in pump laser diode markets and technology”, Lightwave 16 (2), 55–62 (1999).
• [12] J.J. Coleman, “Strained-layer quantum well heterostructure lasers”, Thin Solid Films 216, 68–71 (1992).
• [13] S.D. Offsey, W.J. Schaff, L.F. Lester, L.F. Eastman and S.K. McKernan, “Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high speed modulation”, IEEE J. Quantum Electronics QE-27, 1455–1462 (1991).
• [14] M. Bugajski, M. Kaniewska, K. Reginski, A. Malag, S. Łepkowski and J. Muszalski, “GRIN SCH SQW Al-GaAs/GaAs lasers grown by molecular beam epitaxy: Modeling and operating characteristics”, Proc. SPIE 3186, 310 (1997).
• [15] M. Bugajski, M. Kaniewska, K. Reginski, J. Muszalski, D. Krynska and A. Litkowiec, “GRIN SCH SQW Al-GaAs/GaAs lasers grown by molecular beam epitaxy”, Electron Technology 29, 346–350 (1996).
• [16] PICS 3D Instruction Manual, Crosslight Software Inc., CA 1998
• [17] S.L. Chuang, “Efficient band-structure calculation of strained quantum-wells”, Phys. Rev. B43, 9649–9661 (1991).
• [18] W.W. Chow, S.W. Koch and M. Sargent III, Semiconductor Laser Physics, Springer-Verlag, Berlin Heidelberg, 1994.
• [19] K. Reginski and M. Bugajski, “MBE technology of semiconductor quantum well lasers”, Opto-Electron. Rev. 4, 101–116 (1996).
• [20] J. Katcki, J. Ratajczak, J. Adamczewska, F. Phillip, N.Y. Jin-Phillip, K. Reginski, and M. Bugajski, “Formation of dislocations in InGaAs/GaAs heterostructures”, Physica Status Solidi (a) 171, 275–282 (1999).
• [21] J. Katcki, J. Ratajczak, F. Phillip, N.Y. Jin-Phillip, M. Shiojiri, K. Reginski and M. Bugajski, “TEM study of the formation of defects in AlGaAs/GaAs and In-GaAs/GaAs heterostructures”, Electron Technology 32, 343–347 (1999),
• [22] S.L. Chuang, Physics of Optoelectronic Devices, Wiley Interscience Publication, New York, 1995.
• [23] M. Bugajski and M. Godlewski, “Optical probing of interface disorder in semiconductor nanostructures”, Electron Technology 31, 159–161 (1998).
• [24] M. Bugajski, B. Mroziewicz, K. Reginski, M. Zbroszczyk and A. Malag, “Optical laser pumps InGaAs/GaAs to the optical waveguide amplifiers EDFA type”, Proc. of the VISymp. Laser Technique, Szczecin-Swinoujscie 1, 137–141 (1999), (in Polish).
• [25] M. Bugajski, K. Reginski, B. Mroziewicz, J.M. Kubica, P. Sajewicz, T. Piwonski, and M. Zbroszczyk, “High-performance 980-nmstrained-layer InGaAs/GaAs quantumwell lasers”, Optica Applicata 31, 267–271 (2001).
• [26] T. Piwonski, P. Sajewicz, J.M. Kubica, M. Zbroszczyk, K. Reginski, B. Mroziewicz and M. Bugajski, “Longwavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy”, Microwave and Optical Technology Letters 29, 75–77 (2001).
• [27] A. Larsson, J. Cody and R.J. Lang, “Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency”, Appl. Phys. Lett. 55, 2268–2270 (1989).
• [28] A. Larsson, S. Forouhar, J. Cody, R.J. Lang and P.A. Anderson, “A 980 nm pseudomorfic single quantum well laser for pumping erbium-doped optical fiber amplifiers”, IEEE Photonic Technology Letters PTL-2, 540–542 (1990).
• [29] C. Shieh, J. Mantz, H. Lee, D. Ackley and R. Engelman, “Anomalous dependence of threshold current on stripe width in gain-guided strained-layer InGaAs/GaAs quantum well lasers”, Appl. Phys. Lett. 54, 2521–2523 (1989).
• [30] K.J. Beernink, P.K. York, J.J. Coleman, “Dependence of threshold current density on quantum well composition for strained-layer InGaAs-GaAs lasers by metalorganic chemical vapor deposition”, Appl. Phys. Lett. 55, 2585–2587 (1989).
• [31] K.J. Beernink, P.K. York, J.J. Coleman, R.G. Waters, J. Kim and C.M. Wayman, “Characterization of strained-layer InGaAs-GaAs lasers with quantum wells near the critical thickness”, Appl. Phys. Lett. 55, 2167–2169 (1989).
• [32] H. Horie, H. Ohta and T. Fujimori, “Reliability improvement of 980-nm laser diodes with a new facet passivation process”, IEEE J. Selected Topics in Quantum Electronics 5, 832–838 (1999).
• [33] M. Okayasu, M. Fukuda, T. Takeshita and S. Uehara, “Stable operation (over 5000 h) of high power 0.98 ¹m InGaAs-GaAs strained quantum well ridge waveguide lasers for pumping Er3+-doped fiber amplifiers”, IEEE Photonic Technology Letters PTL-2, 689–691 (1990).
• [34] M. Fukuda, M. Okayasu, J. Temmyo and J. Nakano, “Degradation behavior of 0.98-¹m strained quantum well InGaAs/AlGaAs lasers under high-power operation”, IEEE J. Quantum Electronics, QE-30, 471–476 (1994).
• [35] S.E. Fischer, R.G. Waters, D. Fekete, J.M. Ballantyne, Y.C. Chen and B.A. Soltz, “Long-lived InGaAs quantum well lasers”, Appl. Phys. Lett. 54, 1861–1863 (1989).