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Abstrakty
This paper presents a numerical simulation of epitaxial lateral overgrowth of silicon layers from the liquid phase of an Sn solvent. A two-dimensional diffusion equation has been solved and the concentration profiles of Si in a Si-Sn rich solution during the growth have been constructed. The epilayer thickness and width have been obtained from the concentration near the interface.
Wydawca
Rocznik
Tom
Strony
121--126
Opis fizyczny
Bibliogr. 10 poz., rys.
Twórcy
autor
autor
autor
autor
- Institute of Physics, Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland
Bibliografia
- [1] Zytkiewicz Z R, Dobosz D, Liu Y C and Dost S 2005 Cryst. Res. Technol. 40 (4/5) 321
- [2] Kimura M, Djilali N and Dost S 1994 J. Crystal Growth 143 334
- [3] Kimura M et al. 1996 J. Crystal Growth 167 516
- [4] Liu Y C, Zytkiewicz Z R and DostS 2005 J. Crystal Growth 275 953
- [5] Yan Z, Naritsuka S and Nishinaga T 2000 J. Crystal Growth 209 1
- [6] Nikfetrat K, Djilali Angeles and Dost S 1996 Appl. Math. Modelling 20 371
- [7] Jozwik I and Olchowik J M 2006 J. Crystal Growth 294 367
- [8] Jozwik I and Olchowik J M 2006 21st EU PVSEC, Dresden, Germany
- [9] Anderson J D Jr 1995 Computational Fluid Dynamics - The Basics with Applications, USA
- [10] Sharafat S and Ghoniem N 2000 Summary of Thermo-Physical Properties of Sn, Los Angeles
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPG4-0035-0066