Modelling of thin Si layers growth on partially masked Si substrate

• Autorzy: Gułkowski S. , Olchowik J.M. , Jóźwik I. , Moskvin P.P.
• Języki publikacji: EN

Abstrakty

EN

This paper presents a numerical simulation of epitaxial lateral overgrowth of silicon layers from the liquid phase of an Sn solvent. A two-dimensional diffusion equation has been solved and the concentration profiles of Si in a Si-Sn rich solution during the growth have been constructed. The epilayer thickness and width have been obtained from the concentration near the interface.

Słowa kluczowe

EN

epitaxial lateral overgrowth; liquid-phase epitaxial growth; computer simulations

• Wydawca: Politechnika Gdańska
• Czasopismo: TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
• Rocznik: 2008
• Tom: Vol. 12, No 1-2
• Strony: 121--126
• Opis fizyczny: Bibliogr. 10 poz., rys.

Twórcy

autor

Gułkowski S.

autor

Olchowik J.M.

autor

Jóźwik I.

autor

Moskvin P.P.

• Institute of Physics, Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

Bibliografia

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• [4] Liu Y C, Zytkiewicz Z R and DostS 2005 J. Crystal Growth 275 953
• [5] Yan Z, Naritsuka S and Nishinaga T 2000 J. Crystal Growth 209 1
• [6] Nikfetrat K, Djilali Angeles and Dost S 1996 Appl. Math. Modelling 20 371
• [7] Jozwik I and Olchowik J M 2006 J. Crystal Growth 294 367
• [8] Jozwik I and Olchowik J M 2006 21st EU PVSEC, Dresden, Germany
• [9] Anderson J D Jr 1995 Computational Fluid Dynamics - The Basics with Applications, USA
• [10] Sharafat S and Ghoniem N 2000 Summary of Thermo-Physical Properties of Sn, Los Angeles