Morphology of silicon (111) during electrochemical etching in NH4F electrolytes

• Autorzy: Jakubowicz J.
• Języki publikacji: EN

Abstrakty

EN

The n-type silicon with (111) orientation and resistivity of 8-12 .źcm was electrochemically etched. The results obtained by electrochemical etching of silicon in 0.1M NH4F (pH4.5), 0.1M NH4F (pH4.0) and 0.2M NH4F (pH4.0) electrolytes, indicates that slight increase of the NH4F concentration by 0.1M results in faster silicon dissolution. In slightly reactive 0.1M NH4F (pH4.5), we can observe initial stage of silicon dissolution on the inside edges of atomic terraces. Flat atomic terrace under electrochemical etching undergoes to mesa-type structures surrounded by strongly corrugated areas. The diameter and heights of the mesas are 150-200 nm and 5-7 nm, respectively. The mesa-type structures are the remnants of the atomic terraces and theirs formation proceed independently on the electrolyte concentration. The mesas appear faster at higher concentration and faster disappear by pits formation. During increase of etching time, increase of pore size, more in the case of diameter than depth, because pits coagulation appears.

Słowa kluczowe

EN

porous silicon; electrochemical etching

• Wydawca: Politechnika Gdańska
• Czasopismo: Advances in Materials Science
• Rocznik: 2005
• Tom: Vol. 5, nr 1-3
• Strony: 49--54
• Opis fizyczny: Bibliogr. 9 poz., 3 rys.

Twórcy

autor

Jakubowicz J.

• Poznań University of Technology, Institute of Materials Science and Engineering, Poznań, Poland

Bibliografia

• 1. Kanemitsu Y., Okamoto S., Optical properties of hydrogen terminated silicon nanocrystals, Sol. State Electron, 42, 1998, 1315.
• 2. Sprinter A., Bartels O., Benecke W., Thick porous silicon formation using implanted mask technology, Sens. Actuat. B 76, 2001, 354.
• 3. Parkhutik V., Porous silicon – mechanizm of growth and applications, Sol. State Electron. 43, 1999, 1121.
• 4. Jakubowicz J., Krzywe prądowo-napięciowe a formowanie porowatej struktury w n-Si (111), Inżynieria Materiałowa, 132, 2003, 35.
• 5. Kang Y., Jorne J., Photoelectrochemical dissolution of n-type silicon, Electrochim, Acta 43, 1998, 2389.
• 6. Lewerenz H.J., Jakubowicz J., Jungblut H., Nascent phase of porous silicon, Electrochemistry Communications 6, 2004, 1243.
• 7. Dittrich Th., Sreber I., Rauscher S., Rappich J., Preparation of thin nanoporous silicon layers on n- and p-Si, Thin Solid Films 276, 1996, 200.
• 8. Jakubowicz J., Wytwarzanie atomowo płaskiej tarasowej powierzchni krzemu, Inżynieria Materiałowa (in print).
• 9. Skorupska K., Jakubowicz J., Jungblut H., Lewerenz H.J., Observation of metastable self-organised structure during porous silicon formation, Superlattices and Microstructures 36, 2005, 211.