The development of lec technology for GaAs single crystal growth from laboratory scale to mass production

• Autorzy: Jurisch M. , Eichler St.
• Języki publikacji: EN

Abstrakty

EN

Mass production of SI GaAs single crystals based on an advanced LEC growth process has been established during the last decade of the last century. Two key issues had to be solved : Scaling up of the growth equipment and carbon control. The progress in modelling of thermal heat transfer (radiation, conduction and turbulent convection) due to high computer power and advanced codes has made it possible to optizme the equipment and the processes in rather short time and at lower costs.

Słowa kluczowe

EN

single crystal; crystal growth

PL

monokryształ; wzrost kryształów

• Wydawca: Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
• Czasopismo: Materiały Elektroniczne
• Rocznik: 2003
• Tom: T. 31, nr 1-2
• Strony: 7--17
• Opis fizyczny: Bibliogr. 21 poz., rys.

Twórcy

autor

Jurisch M.

• Freiberger Compound Materials GmbH, D-09599 Freiberg, Germany, Am Junger Lowe Schacht 5

autor

Eichler St.

• Freiberger Compound Materials GmbH, D-09599 Freiberg, Germany, Am Junger Lowe Schacht 5

Bibliografia

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