SiC Schottky Barrier Rectifiers - Theory and Practice

• Autorzy: Synowiec Z.

Warianty tytułu

PL

Diody prostownicze Schottky'ego z węglika krzemu - Teoria i praktyka

• Języki publikacji: EN

Abstrakty

EN

The direct current characteristics of real packaged SiC Schottky barrier rectifiers in the light of up to date knowledge on the reveal subject are presented in this paper. The theory on SiC Schottky barrier rectifier from literature is collected in the text. For comparison the characteristics of SiC Schottky diodes fabricated in research laboratories and reported in literature are also presented. The investigated diodes were intended to work with the maximal forward current of 1 A and the maximal reverse voltage of 600 V. The measured characteristics of four diodes are in a harmony with characteristics presented in product data sheets for room temperature. In the forward current range for which the diodes are intended to work that is for current from 1 mA to 1 A, the I-V characteristics of the diodes are almost identical. The ideality factor ranges from about 1.12 to about 1.17 and is within the range reported in relevant literature. However, there are very different values of reverse leakage currents, although these values are within the range guaranteed by the producer. On the other hand, the forward I-V characteristics below the voltage of 0.75 V and the reverse I-V characteristics below the voltage of 600 V have large discrepancies. The measured reverse I-V characteristics are different from the commonly shown characteristics in papers.

PL

W artykule przedstawiono stałoprądowe charakterystyki handlowo dostępnych, prostowniczych diod Schottky 'ego wykonanych z węglika krzemu (SiC) oraz omówiono mechanizmy przepływu prądu zgodnie z obecnym stanem wiedzy w tej dziedzinie. Dla porównania przedstawiono dostępne w literaturze charakterystyki diod Schottky 'ego z SiC wytworzonych w laboratoriach badawczych. Badane diody przewidziane 53 do pracy z maksymalnym prądem przewodzenia wynoszącym 1 A i z maksymalnym napięciem wstecznym wynoszącym 600 V. Zmierzone w temperaturze pokojowej parametry czterech diod spełniają wymagania zawarte w karcie katalogowej producenta. W istotnym dla pracy tego typu prostownika przedziale wartości natężenia prądu tj. od 1 mA do 1 A, charakterystyki I-V tych diod s§ prawie identyczne. Współczynnik idealności badanych diod wynoszący od 1.12 do 1.17 mieści się w przedziale ktory podawany jest w literaturze. Natomiast, dla polaryzacji wstecznej badane diody majaą bardzo różne wartości prądu upływu, chociaż mieszczą się one w granicach gwarantowanych przez producenta. Generalnie, dla napieć poniżej 0.75 V w kierunku przewodzenia oraz dla napiec poniżej 600 V dla kierunku wstecznego, zmierzone charakterystyki I-V zdecydowanie różnią się między sobą i istotnie inne od tych prezentowanych zwykle w publikacjach.

Słowa kluczowe

EN

Schottky diode

PL

dioda Schottky'ego

• Wydawca: Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
• Czasopismo: Materiały Elektroniczne
• Rocznik: 2004
• Tom: T. 32, nr 1-4
• Strony: 5--22
• Opis fizyczny: Bibliogr. 34 poz., rys., tab., wykr.

Twórcy

autor

Synowiec Z.

• Wroclaw University of Technology Faculty of Microsystem Electronics and Photonics,

Bibliografia

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