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Purpose: In this paper, p-GaN samples have been grown on silicon substrates under various processing conditions. The effects of growth temperature and thermal annealing on the crystal quality and strain were carefully investigated. The electrical properties such as hole concentration and mobility would be discussed. Design/methodology/approach: GaN-based III—V semiconductors have become promising materials for short-wavelength optoelectronic devices because of their large and direct band gap energies. In this paper, p-GaN has been grown by metal-organic chemical vapor deposition (MOCVD) at 900 , 950, 1000, and 1050 degrees centigrade with low temperature LT-deposited AlN/AlGaN buffer layer. Findings: The mobility was achieved at 150 square cm/Vs and the hole concentration was 8x10 to the 17 - cubic cm. SIMS and XRD were used to measure and explain the relationships between hole concentration and the growth temperature. When the growth temperature was increased to 1000 degrees centigrade, the hole concentration was increased by ten times. According to the experimental results, the optimal growth temperature was 1000 degrees centigrade. After the thermal annealing process at temperature 850 degrees centigrade for 2 minutes, the FWHM of p-GaN was lowered to 617 arcsec. The effects of growth temperature were explained in the two temperature regions. From 900 to 1000 degrees centigrade, the incorporation rate of Mg was slightly increased and the strain decreased with the growth temperature. Mg would provide holes and the lower strain would result in better crystal quality. The crystal quality and Mg concentration effects on hole concentration below 1000 degrees centigrade was thus beneficiary. On the other hand, when the growth temperature was further increased, the strain and FWHM increased while hole concentration decreased at 1050 degrees centigrade. At this high temperature, Si might become donor in GaN. Research limitations/implications: It was suggested that the hole concentration reduced at 1050 degrees centigrade due to the Si diffusion and the strain caused by Mg dopant. According to the experimental data, the optimal growth temperature was 1000 degrees centigrade. After the annealing process, the FWHM of p-GaN was lowered to 611 arcsec. Originality/value: Determination of crystal quality and electrical properties of p-type GaN thin film on Si(111) substrate by metal-organic chemical vapor deposition MOCVD.
Wydawca
Rocznik
Tom
Strony
193--197
Opis fizyczny
Bibliogr. 14 poz., rys.
Twórcy
autor
autor
- Institute of Electro-Optical Engineering, Chang Gung University, Kweisan, Taoyuan 333, ROC, Taiwan, wu@mail.cgu.edu.tw
Bibliografia
- [1] S. Nakamura, S. Senoh, N. Iwasa, S. Nagahama, High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures, Japanese Journal of Applied Physics 34 (1995) 797-799.
- [2] S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes, Applied Physics Letters 67 (1995) 1868-1870.
- [3] A. Cahill, M.A. El Baradie, LED-based fibre-optic sensor for measurement of surface roughness, Journal of Materials Processing Technology 119 (2001) 299-306.
- [4] A.N. Gulluoglu, C.T. Tsai, Dislocation generation in GaAs crystals grown by the vertical gradient freeze method, Journal of Materials Processing Technology 102 (2000) 179-187.
- [5] W.Y. Peng, Y.S. Liao, Study of electrical discharge machining technology for slicing silicon ingots, Journal of Materials Processing Technology 140 (2003) 274-279.
- [6] T.C. Chen, R.B. Darling, Parametric studies on pulsed near ultraviolet frequency tripled Nd:YAG laser micro-machining of sapphire and silicon, Journal of Materials Processing Technology 169 (2005) 214-218.
- [7] N. Subramanyam, C.T. Tsai, Dislocation reduction in GaAs crystal grown from the Czochralski process, Journal of Materials Processing Technology 55 (1995) 278-287.
- [8] P.C. Chen, H.H. Yee, H.F. Hong, J.Y. Chang, Y.C. Tzeng, Characterization of p-type Mg-doped GaN epitaxial films deposited at high growth temperatures, Proceeding of the Optics and Photonics Taiwan'01, (2001) 863-867.
- [9] W. Kim, A. Salvador, A.E. Botchkarev, O. Aktas, S.N. Mohammad, H. Morcoc, Mg-doped p-type GaN grown by reactive molecular beam epitaxy, Applied Physics Letters 69 (1996) 559-561.
- [10] L. Sugiura, M. Suzuki, J. Nishio, p-type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition, Applied Physics Letters 72 (1998) 1748-1750.
- [11] S. Yamaguchi, M. Kariya, H. Amano, T. Akasaki, Control of strain in GaN by a combination of H2 and N2 carrier gases, Applied Physics Letters 89 (2001) 7820-7824.
- [12] V. Correcher, J. Garcia-Guinea, L. Sanchez-Munoz A. Delgado, Effect of dopants in the luminescent properties of synthetic quartz for dosimetric purposes, Journal of Materials Processing Technology 143 (2003) 871-874.
- [13] E. Calleja, M.A. Sanchez-Garcia, F.J. Sanchez, F. Calle, Growth of III-nitrides on Si (111) by molecular beam epitaxy doping, optical and electrical properties, Journal of Crystal Growth 201/202 (1999) 296-317.
- [14] C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, M.D. Bremser, E.R. Weber, Strain-related phenomena in GaN thin films, Physical Review B 54/24 (1996) 17745-17753.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BOS5-0020-0022