Electrical resistivity of copper oxide thin films prepared by reactive magnetron sputtering

• Autorzy: Ogwu A. A. , Darma T. H. , Bouquerel E.
• Języki publikacji: EN

Abstrakty

EN

Purpose: Investigation the effect of varying r.f. power and oxygen flow rates during deposition on the electrical properties of copper oxide thin films prepared by reactive magnetron sputtering. Design/methodology/approach: The films were characterised by AFM, XPS, four point electrical resistivity probe measurements and spectrophotometry. Findings: The electrical sheet resistance of the films was found to vary from greater than 4 x 105 ohms/square for films prepared at 200W r.f. power to as low as 20 ohms/square for films prepared at 800W r.f. power. The variation in the electrical resistivity of the films with deposition conditions has been explained in terms of stoichiometric changes induced by copper or oxygen ion vacancies and neutral defects. Practical implications: The formation of these defects depends on the sticking coefficient, nucleation rates and the migration of impinging copper and oxygen species on the substrate during deposition. Originality/value: This information is expected to underlie the successful development of copper oxide films for solar windows and other semi-conductor applications including gas sensors.

Słowa kluczowe

EN

electrical properties; magnetron sputtering; thin films

PL

właściwości elektryczne; rozpylanie magnetronowe; cienkie warstwy

• Wydawca: International OCSCO World Press
• Czasopismo: Journal of Achievements in Materials and Manufacturing Engineering
• Rocznik: 2007
• Tom: Vol. 24, nr 1
• Strony: 172--177
• Opis fizyczny: Bibliogr. 22 poz., rys., tab.

Twórcy

autor

Ogwu A. A.

autor

Darma T. H.

autor

Bouquerel E.

• Thin film centre, School of Engineering and Science, Paisley University, High street, Paisley PA1 2BE, Scotland, United Kingdom,

Bibliografia

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