Amorphous a-C:N:H layers formation by Plasma Enhanced Chemical Vapour Deposition.

• Autorzy: Dul K. , Łagosz I. , Jonas S. , Ptak W.
• Konferencja: XVIth Physical Metallurgy and Materials Science Conference on Advanced Materials and Technologies AMT'2001, Gdańsk-Jurata, 16-20 September 2001
• Języki publikacji: EN

Abstrakty

EN

Amorphous a-C:N:H layers were deposited at room temperature on (100) silicon, quartz glass, steel substrates by RFCVD (radio frequency chemical vapour deposition) and MWCVD (microwave chemical vapour deposition). A gas mixture of methane, nitrogen and argon is used as the reactive gas. The films have been characterised by XPS, FTIR.

PL

Amorficzne warstwy a:C:N:H na (100) krzemie, kwarcowym szkle i stali otrzymano w pokojowej temperaturze metodą chemicznego osadzania z fazy gazowej wspomaganej plazmą o częstotliwości radiowej oraz mikrofalowej. Jako reagenty stosowano mieszaninę metanu, azotu i argonu. Skład chemiczny i strukturę warstw badano rentgenowską spektoskopią fotoelektronów (XPS) i fourierowską spektroskopią w podczerwieni (FTIR).

Słowa kluczowe

EN

amorphous layer; radio frequency chemical vapour deposition; microwave chemical vapour deposition; plasma enhanced chemical vapour deposition; chemical deposition; structure of layers

PL

warstwa amorficzna; chemiczne osadzanie z fazy gazowej wspomagane plazmowo; częstotliwość radiowa; częstotliwość mikrofalowa; skład chemiczny; struktura warstw

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Inżynieria Materiałowa
• Rocznik: 2001
• Tom: R. XXII, nr 4
• Strony: 296--298
• Opis fizyczny: Bibliogr. 19 poz. tab., rys.

Twórcy

autor

Dul K.

autor

Łagosz I.

autor

Jonas S.

autor

Ptak W.

Bibliografia

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