Structure of laser treated multicrystalline silicon wafers

• Autorzy: Dobrzański L. A. , Drygała A. , Konieczny J. , Lelątko J.
• Języki publikacji: EN

Abstrakty

EN

Purpose: The aim of the paper is to demonstrate influence of laser processing on multicrystalline silicon. This process is applied for texturization of solar cells. Design/methodology/approach: Evaluation of results was performed by transmission electron microscope (TEM). Findings: Performed experiments revealed that laser processing may introduce linear defects in crystallographic structure of silicon. Additionally, it was found that this kind of processing produces thin amorphous layer. Research limitations/implications: Laser scribing introduces defects. It is important to characterize their influence on the electrical properties of silicon solar cells. It is possible to remove these defects by means of chemical etching. Practical implications: The research presented in the paper was carried out to incorporate elaborated method into manufacturing process of solar cells of reduced reflectance from the front surface. Success of research is expected to lead to higher efficiency solar cells. Originality/value: value of the paper lies in finding attractive method for efficient texturization of multicrystalline silicon.

Słowa kluczowe

EN

surface treatment; multicrystalline silicon; laser treatment

PL

obróbka powierzchniowa; krzem mikrokrystaliczny; obróbka laserowa

• Wydawca: International OCSCO World Press
• Czasopismo: Journal of Achievements in Materials and Manufacturing Engineering
• Rocznik: 2007
• Tom: Vol. 21, nr 2
• Strony: 69--72
• Opis fizyczny: Bibliogr. 18 poz., fot., rys.

Twórcy

autor

Dobrzański L. A.

autor

Drygała A.

autor

Konieczny J.

autor

Lelątko J.

• Division of Materials Processing Technology, Management and Computer Techniques in Materials Science, Institute of Engineering Materials and Biomaterials, Silesian University of Technology, ul. Konarskiego 18 a, 44-100 Gliwice, Poland,

Bibliografia

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