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AMT'98 XVth Physical Metallurgy and Materials Science Conference 'Advanced materials & technologies' 17-21 May, 1998, Kraków-Krynica, Poland.
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AlSn20 films were prepared by magnetron sputter deposition in an argon gas plasma. The films were obtained at different working pressures and contents of oxygen in vacuum chamber, as well as at different cathode - substrate distance and sputter rates. The observation of film morphology was carried out with the use of SEM. It was proved that distance cathode - substrate, content of oxygen and gas pressure in vacuum chamber exert significant effect on the morphology of AlSn20 films.
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Tom
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1092--1095
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Bibliografia
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bwmeta1.element.baztech-article-BOS1-0007-0046