Defect-related properties of SrTiO3.

• Autorzy: Pasierb P. , Komornicki S. , Rękas M.
• Konferencja: XV Physical Metallurgy and Materials Science Conference on Advanced Materials & Technologies AMT'98, Kraków-Krynica, Poland, 17-21 May, 1998
• Języki publikacji: EN

Abstrakty

EN

The defect structure and the chemical diffusion coefficients Dchem were determined in Ti excess undoped and Nb doped SrTiO3 thin films as well as in undoped SrTiO3 single crystal (1 0 0). The observed difference in Dchem was explained basing on the defect structure models. In both cases of SrTiO3 thin films, the low-mobility strontium vacancies are the predominant defects, while in case of SrTiO3 single crystal the high-mobility oxygen vacancies are responsible for the much faster oxygen gradient decay.

Słowa kluczowe

EN

thin film; single crystal; perovskite; diffusion; strontium; titanate; electrical conductivity

PL

cienka warstwa; monokryształ; perowskit; dyfuzja; stront; tytanian; przewodność właściwa

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Inżynieria Materiałowa
• Rocznik: 1998
• Tom: R. XIX, nr 4
• Strony: 848--851
• Opis fizyczny: Bibliogr. 8 poz., rys.

Twórcy

autor

Pasierb P.

• University of Mining and Metallurgy, Faculty of Materials Science and Ceramics, Kraów, Poland

autor

Komornicki S.

• University of Mining and Metallurgy, Faculty of Materials Science and Ceramics, Kraów, Poland

autor

Rękas M.

• Australian Nuclear Science & Technology Organisation, Materials Division, Australia

• University of Mining and Metallurgy, Faculty of Materials Science and Ceramics, Kraków

Bibliografia

• [1] P. Pasierb i St. Komornicki, Opto-Electronics Review, 2 (1994) 43
• [2] P. Pasierb “Cienkie warstwy tlenkowe na bazie tytanianu strontu” – praca doktorska AGH, Kraków, 1997
• [3] J. Gerblinger i H. Meixner, Silicates Industriels, 1-2 (1994) 31
• [4] L.C. Walters, R.E. Grace, J. Phys. Chem. Solids, 28 (1967) 239
• [5] N.-H. Chan, R.K. Sharma, D.M. Smyth, J. Electrochem. Soc., 128 (1981) 762
• [6] U. Balachandran, N.G. Eror, J. Solid State Chem., 39 (1981) 351
• [7] J.B. Price i J.B. Wagner Jr., Z. Phys. Chem. Neue Folge, 49 (1966) 257
• [8] M. Radecka i M. Rękas, J. Phys. Chem. Solids, 56 (8) (1995) 1031