Structural study of InGaAs/GaAs heterostructures.

• Autorzy: Kątcki J. , Rzodkiewicz W. , Ratajczak J. , Adamczewska J. , Regiński K. , Phillipp F. , Jin-Phillipp N.Y.
• Konferencja: XV Physical Metallurgy and Materials Science Conference on Advanced Materials & Technologies AMT'98, Kraków-Krynica, Poland, 17-21 May, 1998
• Języki publikacji: EN

Abstrakty

EN

This paper reports results of the investigation of the influence of the profile of indium content in a InxGa1-xAs layer on the formation of dislocations. In GaAs/GaAs heterostructures were grown by molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) and x-ray diffractometry was involved. A difference in dislocation structure was observed in a heterostructure with a graded-index layer and with InxGa1-xAs multilayers.

Słowa kluczowe

EN

indium; layer; dislocation; lattice; lattice disregistry; lattice misfit

PL

ind; warstwa; powłoka; dyslokacja; sieć krystaliczna; niedopasowanie sieciowe

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Inżynieria Materiałowa
• Rocznik: 1998
• Tom: R. XIX, nr 4
• Strony: 844--847
• Opis fizyczny: Bibliogr. 5 poz., rys.

Twórcy

autor

Kątcki J.

• Institute of Electron Technology, Warsaw, Poland

autor

Rzodkiewicz W.

• Institute of Electron Technology, Warsaw, Poland

autor

Ratajczak J.

• Institute of Electron Technology, Warsaw, Poland

autor

Adamczewska J.

• Institute of Physics, PAS, Warsaw, Poland

autor

Regiński K.

• Institute of Electron Technology, Warsaw, Poland

autor

Phillipp F.

• Max-Planck Institut fur Metallforschung, Stuttgart, Germany

autor

Jin-Phillipp N.Y.

• Max-Planck Institut fur Metallforschung, Stuttgart, Germany

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

• [1] T.P. Pearsall, Indium Gallium Arsenide (P. Bhattacharya, ed.), INSPEC, 1993, p. 267
• [2] N.K. Dutta, Indium Gallium Arsenide (P. Bhattacharya, ed.), INSPEC, 1993, p. 279
• [3] T,G, Andersson, Z,G, Chen, V.D. Kulakovskii, A. Uddin and J.T. Vallin, Appl. Phys. Lett, 51 (1987), 752
• [4] J. Ratajczak, T Reports, 1990, vol. 9, p. 51.
• [5] J. Kątcki, J. Ratajczak, A. Maląg and M. Piskorski, Microscopy of Semiconducting Materials 1995, A.G. Cullis, A.E. Station-Bevan (Ed.), IOP, Bristol, 1996, p.273.