Magnetic thin films and nanostructures for emerging technologies.

• Autorzy: Krishnan K.M.
• Konferencja: XV Physical Metallurgy and Materials Science Conference on Advanced Materials & Technologies AMT'98, Kraków-Krynica, Poland, 17-21 May, 1998
• Języki publikacji: EN

Abstrakty

EN

The optimization of the magnetic properties of materials for a wide range of technologies requires a dynamic iteration between synthesis, property measurements and the evaluation/control of microstructure (physical, chemical & magnetic) at the appropriate length scales. In addition, atomically engineered thin films and nanostructures offer new opportunities to elucidate the physics of magnetism, test new theories and most importantly build new materials with unique anisotropy, transport and hysteretic properties. These interests arise from advances in materials synthesis, an increased appreciation of the degree to which magnetic properties are influenced by microstructure and interfacial processes and the ability to characterize them by electron-optic and x-ray scattering/dichroism techniques. In this paper, we present an overview of our recent work in these areas, involving an integrated approach of growth/synthesis, property measurements and advanced characterization.

Słowa kluczowe

EN

thin film; magnetic properties; anisotropy; ferromagnetic material; epitaxial growth; magnetization; resistance; conductivity; manganite

PL

cienka warstwa; własności magnetyczne; anizotropia; materiał ferromagnetyczny; wzrost epitaksjalny; magnesowanie; opór; przewodność właściwa; manganin

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Inżynieria Materiałowa
• Rocznik: 1998
• Tom: R. XIX, nr 4
• Strony: 775--778
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Krishnan K.M.

• Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, USA

• University of California, Lawrence Berkeley National Laboratory, Materials Sciences Division

Bibliografia

• [1] Kannan M. Krishnan, Appl. Phys. Lett., 61 (1992) 2365
• [2] Kannan M. Krishnan, T. Takeuchi, Y. Hirayama and M. Futamoto, IEEE Trans. Mag. 30 (1994) 5115
• [3] Kannan M. Krishnan, Appl. Phys. Lett., 67, (1995) 2238
• [4] F. C. Farrow et al., Appl. Phys. Lett., 69, (1996) 1963
• [5] Honglyoul Ju, H.-C. Sohn and Kannan M. Krishnan, Phys. Rev. Lett., 79 (1997) 3230
• [6] M. Benaissa, Kannan M. Krishnan, E. Fullerton and J. S. Jiang, IEEE Trans. Mag. in press