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Experimental analysis of velocity and temperature fields in a system similar to the Czochralski method of single crystal growth

Wybrane pełne teksty z tego czasopisma
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Języki publikacji
EN
Abstrakty
EN
The mixed convection phenomenon plays a very important role in the Czochralski crystal growth due to its essential influence on the heat and mass transport processes. This paper presents the experimental analysis of the natural and mixed convection in the case of a single crystal growth system by the Czochralski method. The influence of such parameters like: temperature difference, rotation of speed of the crystal and the crucible and also aspect ratios were examined. To simulate a configuration of the Czochralski method a glass cylindrical crucible was immersed in a cubic aquarium filled with water. The copper cylinder simulating the crystal (crystal dummy) was attached to the surface of working fluid. Two constant temperature baths were used to control the level of temperature difference between the crucible walls and the crystal dummy. The crucible and the crystal were rotated by the system of engines. Their movement was continuously controlled. Two main methods were applied to investigate the temperature and velocity fields - DPIT and DPIV. The liquid crystal slurry was used as the tracers in both methods. The results are presented in the from of colour temperature maps and vector velocity fields.
Rocznik
Strony
83--102
Opis fizyczny
Bibliogr. 15 poz.,rys., tab., wz.,
Twórcy
autor
autor
autor
autor
  • AGH University of Science and Technology, 30 Mickiewicza Ave., 30-059 Kraków, Poland, remigius@agh.edu.pl
Bibliografia
  • [1] BASU B., ENGER S., BREUER M., DURST F.: Effect of crystal rotation on the three-dimensional mixed convection in the oxide melt fort Czochralski growth, J. Crystal Growth 230(2001), no. 1, 148-154.
  • [2] ENGER S., GRÄBNER O., MÜLLER G., BREUET M., DURST F.: Comparison of measurements and numerical simulations of melt convection in Czochralski crystal growth of silicon, J. Crystal Growth 230(2001), No. 1, 135-142.
  • [3] HINTZ P., SHWABE D., WILKE H.: Convection in a Czochralski crucible - Part 1: Non-rotating crystal, J. Crystal Growth 222(2001), No. 1, 343-355.
  • [4] Hintz P., SHWABE D.: Convection in a Czochralski crucible - Part 2: rotating crystal, J. Crystal Growth, 222(2001), No. 1, 356-364.
  • [5] HURLE D.T.J.: Crystal Pulling from the Melt, Springer, Berlin 1993.
  • [6] HURLE D.T.J., COCKAYNE B.: Czochralski Growth, [in:] D.T.J. Hurle, Handbook of Crystal Growth, Vol. 2a, Elsevier Science Publishers B.V., Amsterdam, 1994, 99-211.
  • [7] KRZYMINSKI U., OSTROGORSKY A.G.: Visualization of convection In Czochralski melts using salts under realistic thermal boundary conditions, J. Crystal Growth, 174(1997), No. 1-4, 19-27.
  • [8] LEE Y.S., CHUN CH.H.: Experiments on the oscillatory convection of low Prandtl number liquid in Czochralski crystal growth under an axial magnetic field, J. Crystal Growth, 198-99(1999), 147-153.
  • [9] MUNAKATA T., SOMEYA S., TANASAWA I.: Effect of high frequency magnetic field on CZ silicon melt convection, Int. J. Heat and Mass Transfer, 4(2004), No. 21, 4523-4533.
  • [10] MÜLLER G., OSTROGORSKY A.: Convection in Melt Growth, in: D.T.J. Hurle, Handbook of Crystal Growth, Vol. 2b, Elsevier Science Publishers B.V., Amsterdam 1994, 709-819.
  • [11] PARK H.G., DABIRI D., GHARBI M.: Digital particle image velocimetry/thermometry and application to the wake of heated circular cylinder, Experiments in Fluids 3)(2001), No. 3, 327-338.
  • [12] RAFFEL M., WILLERT C. E., KOMPENHANS J.: Particle Image Velocimetry: a partical guide, Springer, Berlin-Heidelberg 1998.
  • [13] SMITH R.C., SABATINO D.R., PRAISNER T.J.: Temperature sensing with thermochromic liquid crystals, Exp. in Fluids 30(2001), No. 2, 190-201.
  • [14] SZMYD J.S.: Crystal Growth by Czochralski method - Jan Czochralski Polish Scientist, [in:] XIIth Symposium of Heat and Mass Transfer, AGH, Kraków 2004, 69-82.
  • [15] VIRBULIS J., WETZEL TH., TOMZIG E., VON AMMON W.: Silicon melt convection in large size Czochralski crucible, Materials Science in Semiconductor Processing, 5(2003), No. 4, 353-359.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BGPK-2161-8331
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