Large-Signal RF Modeling with the EKV3 MOSFET Model

• Autorzy: Chalkiadaki M. A. , Buchar M.
• Języki publikacji: EN

Abstrakty

EN

This paper presents a validation of the EKV3 MOSFET model under load-pull conditions with high input power at 5.8 GHz, as well as S-parameter measurements with low input power up to 20 GHz. The EKV3 model is able to represent coherently the large- and small-signal RF characteristics in advanced 90 nm CMOS technology. Multifinger devices with nominal drawn gate length of 70 nm are used.

Słowa kluczowe

EN

compact model; EKV3 model; large-signal; load-pull; MOSFET model; radio frequency

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2010
• Tom: nr 1
• Strony: 29--33
• Opis fizyczny: Bibliogr. 8 poz., rys.

Twórcy

autor

Chalkiadaki M. A.

autor

Buchar M.

• Department of Electronics and Computer Engineering, Technical University of Crete, Chania 73100, Greece,

Bibliografia

• [1] C.-W. Kuo, C.-C. Ho, and Y.-J. Chan, “Scalable large-signal model of 0.18 μm CMOS process for RF power predictions”, Solid-State Electron., vol. 47, no. 1, pp. 77–81, 2003.
• [2] S. Yoshitomi, “Challenges of compact modeling for deep-submicron RF-CMOS devices”, in Proc. 12th Int. Conf. MIXDES 2005, Kracow, Poland, 2005.
• [3] C.-C. Wei, C.-S. Cheng, S.-W. Lin, Y.-J. Chen, H.-C. Chiu, and W.-S. Feng, “An improved BSIM4 model for 0.13-um gate-length high linearity CMOS RF transistors”, PIERS Online, vol. 3, no. 7, pp. 1000–1004, 2007.
• [4] A. Bazigos, M. Bucher, F. Krummenacher, J.-M. Sallese, A.-S. Roy, and C. Enz, “EKV3 MOSFET Compact Model Documentation, Model Version 301.02”, Techn. Rep., Technical University of Crete, June 2008.
• [5] C. C. Enz and E. A. Vittoz, Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design. Chichester: Wiley, 2006.
• [6] S. Yoshitomi, A. Bazigos, and M. Bucher, “The EKV3 model parameter extraction and characterization of 90 nm RF-CMOS technology”, in Proc. 14th Int. Conf. MIXDES 2007, Ciechocinek, Poland, 2007, pp. 74–79.
• [7] M. Bucher, A. Bazigos, S. Yoshitomi, and N. Itoh, “A scalable advanced RF IC design-oriented MOSFET model”, Int. J. RF Microw. Comput. Aid. Eng., vol. 18, no. 4, pp. 314–325, 2008.
• [8] M. Bucher and A. Bazigos, “An efficient channel segmentation approach for a large-signal NQS MOSFET model”, Solid-State Electron., vol. 52, no. 2, pp. 275–281, 2008.