The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma

• Autorzy: Kalisz M. , Głuszko G. , Beck R. B.
• Języki publikacji: EN

Abstrakty

EN

This study describes the effects of high temperature annealing performed on structures fluorinated during initial silicon dioxide reactive ion etching (RIE) process in CF4 plasma prior to the plasma enhanced chemical vapour deposition (PECVD) of the final oxide. The obtained results show that fluorine incorporated at the PECVD oxide/Si interface during RIE is very stable even at high temperatures. Application of fluorination and high temperature annealing during oxide layer fabrication significantly improved the properties of the interface (Ditmb decreased), as well as those of the bulk of the oxide layer (Qeff decreased). The integrity of the oxide (higher Vbd ) and its uniformity (Vbd distribution) are also improved.

Słowa kluczowe

EN

capacitance-voltage characteristics; current-voltage characteristics; fluorine plasma; high temperature annealing process; radio frequency reactive ion etching

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2010
• Tom: nr 1
• Strony: 25--28
• Opis fizyczny: Bibliogr. 9 poz., rys., tab.

Twórcy

autor

Kalisz M.

autor

Głuszko G.

autor

Beck R. B.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa st 75, 00-662 Warsaw, Poland; Motor Transport Institute, Jagiellońska st 80, 03-301 Warsaw, Poland,

Bibliografia

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• [8] M. Kalisz, G. Głuszko, and R. B. Beck, “Novel method of improving electrical properties of thin PECVD oxide films by fluorination of silicon surface region by RIE in RF CF4 plasma”, J. Telecommun. Inform. Technol., no. 1, pp. 20–24, 2010.
• [9] M. Kalisz, R. B. Beck, and M. Ćwil, “Reactive-ion-etching (RIE) process in CF4 plasma as a method of fluorine implantation”, Vacuum, vol. 82, no. 10, pp. 1046–1050, 2008.