Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma

• Autorzy: Kalisz M. , Głuszko G. , Beck R. B.
• Języki publikacji: EN

Abstrakty

EN

This study describes a novel technique to form good quality low temperature oxide (< 350 C degree). Low temperature oxide was formed by N2O + SiH4:N2 plasma in a plasma enhanced chemical vapour deposition (PECVD) system on the silicon surface reactively etched in CF4 plasma (RIE - reactive ion etching). The fabricated oxide demonstrated excellent (for low temperature dielectric formation process) currentvoltage (I-V) characteristics, such as: low leakage current, high breakdown voltage and good reliability. Experimental results indicate that the proposed method of fluorine incorporation into the SiO2/Si inteface improves electrical parameters of MOS structures.

Słowa kluczowe

EN

capacitance-voltage characteristics; current-voltage characteristics; fluorine plasma; radio frequency reactive ion etching

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2010
• Tom: nr 1
• Strony: 20--24
• Opis fizyczny: Bibliogr. 10 poz., rys., tab.

Twórcy

autor

Kalisz M.

autor

Głuszko G.

autor

Beck R. B.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa st 75, 00-662 Warsaw, Poland; Motor Transport Institute, Jagiellońska st 80, 03-301 Warsaw, Poland,

Bibliografia

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