Technology of MISFET with SiO2/BaTiO3 System as a Gate Insulator

• Autorzy: Firek P. , Szmidt J.
• Języki publikacji: EN

Abstrakty

EN

The properties of barium titanate (BaTiO3, BT), such as high dielectric constant and resistivity, allow it to find numerous applications in the field of microelectronics. In this work silicon metal-insulator-semiconductor field effect transistor (MISFET) structures with BaTiO3 thin films (containing La2O3 admixture) acting as gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2% wt.) target. In the paper transfer and output I-V, transconductance and output conductance characteristics of the obtained transistors are presented and discussed. Basic parameters of these devices, such as threshold voltage (VTH) are determined and discussed.

Słowa kluczowe

EN

barium titanate; I-V characteristics; MISFET structures; radio frequency plasma sputtering

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2009
• Tom: nr 4
• Strony: 61--64
• Opis fizyczny: Bibliogr. 12 poz., rys.

Twórcy

autor

Firek P.

autor

Szmidt J.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa st 75, 00-662 Warsaw, Poland,

Bibliografia

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