Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond

• Autorzy: Mitrovic I. Z. , Hall S.
• Języki publikacji: EN

Abstrakty

EN

Over the last decade there has been a significant amount of research dedicated to finding a suitable high-k/metal gate stack to replace conventional SiON/poly-Si electrodes. Materials innovations and dedicated engineering work has enabled the transition from research lab to 300 mm production a reality, thereby making high-k/metal gate technology a pathway for continued transistor scaling. In this paper, we will present current status and trends in rare earthbased materials innovations; in particular Gd-based, for the high-k/metal gate technology in the 22 nm node. Key issues and challenges for the 22 nm node and beyond are also highlighted.

Słowa kluczowe

EN

gadolinium silicate; interfacial layer; lanthanides; rare earth oxides

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2009
• Tom: nr 4
• Strony: 51--60
• Opis fizyczny: Bibliogr. 98 poz., rys., tab.

Twórcy

autor

Mitrovic I. Z.

autor

Hall S.

• Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool L69 3GJ, United Kingdom,

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