The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs

• Autorzy: Emam M. , Houri S. , Vanhoenacker-Janvier D. , Raskin J.-P.
• Języki publikacji: EN

Abstrakty

EN

This paper presents a complete study of the impact of mechanical stress on the performance of SOI MOSFETs. This investigation includes dc, analog and RF characteristics. Parameters of a small-signal equivalent circuit are also ex- tracted as a function of applied mechanical stress. Piezoresistance coefficientis shown to be a key element in describing the enhancement in the characteristics of the device due to mechanical stress.

Słowa kluczowe

EN

cut-off frequency fT; intrinsic gain; mechanical stress; piezoresistance coefficient; SOI MOSFET

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2009
• Tom: nr 4
• Strony: 18--24
• Opis fizyczny: Bibliogr. 22 poz., rys.

Twórcy

autor

Emam M.

autor

Houri S.

autor

Vanhoenacker-Janvier D.

autor

Raskin J.-P.

• Universit´e catholique de Louvain, Place du Levant, 3, Maxwell Building, B-1348 Louvain-la-Neuve, Belgium,

Bibliografia

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