High-Frequency Power Amplitude Modulators with Class-E Tuned Amplifiers

• Autorzy: Modzelewski J. , Mikołajewski M.
• Języki publikacji: EN

Abstrakty

EN

A high-frequency power amplifier used in a drain amplitude modulator must have linear dependence of output HF voltage Vo versus its supply voltage VDD. This condition essential for obtaining low-level envelope distortions is met by a theoretical class-E amplifier with a linear shunt capacitance of the switch. In this paper the influence of non-linear output capacitance of the transistor in the class-E amplifier on its Vo(VDD) characteristic is analyzed using PSPICE simulations of the amplifiers operating at frequencies 0.5 MHz, 5 MHz and 7 MHz. These simulations have proven that distortions of theVo(VDD) characteristic caused by non-linear output capacitance of the transistor are only slight for all analyzed amplifiers, even for the 7 MHz amplifier without the external (linear) shunt capacitance. In contrast, the decrease of power efficiency of the class-E amplifier resulting from this effect can be significant even by 40%

Słowa kluczowe

EN

high-efficiency amplitude modulators; non-ZVS operation; optimum operation; PSpice simulations; suboptimum operation

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2008
• Tom: nr 4
• Strony: 79--86
• Opis fizyczny: Bibliogr. 12 poz., rys., tab.

Twórcy

autor

Modzelewski J.

autor

Mikołajewski M.

• Institute of Radioelectronics, Warsaw University of Technology, Nowowiejska st 15/19, 00-665 Warsaw, Poland,

Bibliografia

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