Monte Carlo method used for a prognosis of selected technological parameters

• Autorzy: Langer M.
• Języki publikacji: EN

Abstrakty

EN

In this paper a smart modeling approach for realistic simulation of selected technological parameters is presented. The technology of making contacts with plasma vapor deposition (PVD) method has been chosen for this purpose. The analysis is based on the Monte Carlo (MC) method and uses the Excel worksheet - the simplest tool, easily accessible to anyone. The statistic parameters are calculated and discussed as we introduce this experiment to demonstrate the advantages of design for six sigma (DFSS)

Słowa kluczowe

EN

DFSS; MC method; PVD; contacts; Excel randomizing

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 96--100
• Opis fizyczny: Bibliogr.7 poz., il., tab.

Twórcy

autor

Langer M.

• Institute of Electronics, Technical University of Łodź, Wolczańska st 211/215 90-924 Łodź, Poland,

Bibliografia

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• [3] C. W. Gardiner, Handbook of Stochastic Methods for Physics, Chemistry and The Natural Sciences. Berlin [etc.]: Springer, 2004.
• [4] “Innovative stochastic algorithms”, http://members.shaw.ca
• [5] Cienkie warstwy metaliczne. Warsaw-Wrocław: PWN, 1974 (in Polish).
• [6] V. Shashkin et al., “Microstructure and properties of aluminum contacts formed on GaAs (100) by low pressure CVD with dimethylethylamine alane source”, J. Electron. Mater., vol. 30, no. 8, pp. 980–987, 2001.
• [7] Procesy technologiczne w elektronice półprzewodnikowej. Warsaw: WNT, 1980 (in Polish).