Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys

• Autorzy: Stęszewski J. , Jakubowski A. , Korwin-Pawlowski M. L.
• Języki publikacji: EN

Abstrakty

EN

A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments.

Słowa kluczowe

EN

silicon carbide; SiC MOSFET; 4H-SiC; 6H-SiC; Crosslight Apsys; Silvaco Atlas

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 93--95
• Opis fizyczny: Bibliogr.11 poz., il., tab.

Twórcy

autor

Stęszewski J.

autor

Jakubowski A.

autor

Korwin-Pawlowski M. L.

• Universite du Qebec en Outaouais, C. P. 1250, succ. Hull, 283, boul. Alexandre-Tache, Gatineau (Quebec) J8X 3X7, Canada,

Bibliografia

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• [4] User’s Manual. Atlas, Silvaco, 2002.
• [5] User’s Manual. Apsys, Crosslight, 2000.
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• [9] A. Galeckas, J. Linnros, V. Grivickas, U. Lindefelt, and C. Hallin, “Auger recombination in 4H-SiC: unusual temperature behavior”, in Proc. 7th Int. Conf. SiC, III-Nitr. Rel. Mater., Stockholm, Sweden, 1997, pp. 533–536.
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• [11] U. Lindefelt, “Doping-induced band edge displacements and band gap narrowing in 3C-, 4H-, 6H-SiC, and Si”, J. Appl. Phys., vol. 84, no. 5, pp. 2628–2637, 1998.