Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base

• Autorzy: Zaręba A. , Łukasiak L. , Jakubowski A.
• Języki publikacji: EN

Abstrakty

EN

A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.

Słowa kluczowe

EN

heterojunction bipolar transistor; SiGe; base width modulation

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 88--92
• Opis fizyczny: Bibliogr.9 poz., il.

Twórcy

autor

Zaręba A.

autor

Łukasiak L.

autor

Jakubowski A.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland,

Bibliografia

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