Charge-pumping characterization of FILOX vertical MOSFETs

• Autorzy: Głuszko G. , Łukasiak L. , Ashburn P.
• Języki publikacji: EN

Abstrakty

EN

This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed.

Słowa kluczowe

EN

charge-pumping; FILOX; interface traps; MOSFET; vertical MOSFET

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 73--77
• Opis fizyczny: Bibliogr.8 poz., il.

Twórcy

autor

Głuszko G.

autor

Łukasiak L.

autor

Ashburn P.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland,

Bibliografia

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