Characterization of SOI MOSFETs by means of charge-pumping

• Autorzy: Głuszko G. , Szostak S. , Gottlob H. , Lemme M. , Łukasiak L.
• Języki publikacji: EN

Abstrakty

EN

This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at front-interface.

Słowa kluczowe

EN

charge-pumping; electrical characterization; interface traps; SOI MOSFET

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 67--72
• Opis fizyczny: Bibliogr.5 poz., rys.

Twórcy

autor

Głuszko G.

autor

Szostak S.

autor

Gottlob H.

autor

Lemme M.

autor

Łukasiak L.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland,

Bibliografia

• [1] J.-P. Collinge, Silicon-on-Insulator Technology: Materials to VLSI. Boston: Kluwer, 2004.
• [2] S. Cristoloveanu, “Silicon on insulator technologies and devices: from present to future”, Solid-State Electron., vol. 45, no. 8, pp. 1403–1411, 2001.
• [3] N. Nenadovic et al., “RF power silicon-on-glass VDMOSFETs”, IEEE Electron Dev. Lett., vol. 25, no. 6, pp. 424–426, 2004.
• [4] J. S. Brugler and P. G. A. Jespers, “Charge pumping in MOS devices”, IEEE Trans. Electron Dev., vol. 16, p. 297, 1969.
• [5] M. C. Lemme, T. Mollenhauer, H. Gottlob, W. Henschel, J. Efavi, C. Welch, and H. Kurz, “Highly selective HBr etch process for fabrication of triple-gate nano-scale SOI-MOSFETs”, Microelectron. Eng., vol. 73–74, pp. 346–350, 2004.