Powiadomienia systemowe
- Sesja wygasła!
- Sesja wygasła!
Tytuł artykułu
Treść / Zawartość
Pełne teksty:
Identyfikatory
Warianty tytułu
Języki publikacji
Abstrakty
Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology (IET).
Rocznik
Tom
Strony
55--60
Opis fizyczny
Bibliogr.3 poz., rys., tab.
Twórcy
autor
autor
autor
autor
autor
autor
- Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland, dtomasz@ite.waw.pl
Bibliografia
- [1] P. Bergveld, “Thirty years of ISFETOLOGY. What happened in the past 30 years and what may happen in the next 30 years”, Sens. Actuat. B, vol. 88, pp. 1–20, 2003.
- [2] P. Bergveld, “ISFET, theory and practice”, in IEEE Int. Conf. Sens., Toronto, Canada, 2003.
- [3] N. Arora, MOSFET Models for VLSI Circuit Simulation. Theory and Practice. Wien: Springer-Verlag, 1995.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BAT8-0009-0067