Electrical characterization of ISFETs

• Autorzy: Tomaszewski D. , Yang C. M. , Jaroszewicz B. , Zaborowski M. , Grabiec P. , Pijanowska D.
• Języki publikacji: EN

Abstrakty

EN

Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology (IET).

Słowa kluczowe

EN

ISFET; CMOS; electrical measurements; I-V characteristics; characterization; parameters extraction

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 55--60
• Opis fizyczny: Bibliogr.3 poz., rys., tab.

Twórcy

autor

Tomaszewski D.

autor

Yang C. M.

autor

Jaroszewicz B.

autor

Zaborowski M.

autor

Grabiec P.

autor

Pijanowska D.

• Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [1] P. Bergveld, “Thirty years of ISFETOLOGY. What happened in the past 30 years and what may happen in the next 30 years”, Sens. Actuat. B, vol. 88, pp. 1–20, 2003.
• [2] P. Bergveld, “ISFET, theory and practice”, in IEEE Int. Conf. Sens., Toronto, Canada, 2003.
• [3] N. Arora, MOSFET Models for VLSI Circuit Simulation. Theory and Practice. Wien: Springer-Verlag, 1995.