Influence of the deposition process parameters on electronic properties of BN films obtained by means of RF PACVD

• Autorzy: Firek P. , Werbowy A. , Szmidt J. , Kwietniewski M.
• Języki publikacji: EN

Abstrakty

EN

This work presents results of investigations of electronic properties of undoped boron nitride (BN) films produced on Si substrates in the course of radio frequency (rf) PACVD process with boron triethyl (C2H5)3B as the boron source. The influence of the deposition process parameters on thickness and electronic properties (resistivity r, dielectric strength EBR) of BN films based on ellipsometry and I-V curve measurements at room temperature is studied. The obtained results show that proper selection of deposition process parameters allows BN layers with the required thickness and advantageous values of r and EBR to be fabricated. BN becomes therefore an interesting material for microelectronics applications.

Słowa kluczowe

EN

III-nitrides; thin BN films; electronic properties; RF PACVD

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 33--36
• Opis fizyczny: Bibliogr. 6 poz., rys., tab.

Twórcy

autor

Firek P.

autor

Werbowy A.

autor

Szmidt J.

autor

Kwietniewski M.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland,

Bibliografia

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• [3] S. Mitura, E. Mitura, and A. Mitura, “Manufacture of amorphous carbon layers by r.f. dense plasma CVD”, Diam. Rel. Mater., no. 4, pp. 202–203, 1995.
• [4] J. Szmidt, “Electronic properties of nanocrystalline layers of wide band gap materials”, Chaos, Sol. Fract., vol. 10, no. 12, pp. 2099–2152, 1999.
• [5] S. Mitura, A. Mitura, P. Niedzielski, and P. Couvart, “Nanocrystalline diamond coatings”, Chaos, Sol. Fract., vol. 10, no. 12, pp. 2165–2176, 1999.
• [6] G. S. Peace, Taguchi Methods – A Hands – On Approach. Reading: Addison-Wesley, 1993.