Oxidation kinetics of silicon strained by silicon germanium

• Autorzy: Grabowski J. , Beck R. B.
• Języki publikacji: EN

Abstrakty

EN

This paper reports on the studies of oxidation kinetics of silicon strained by silicon germanium layers. Experimental results of natural, chemical and thermal oxide formation are presented. The oxidation rates of silicon strained by SiGe layers have been compared with the rates of pure Si oxidation. The oxidation kinetics was studied using the parallel model proposed by Beck and Majkusiak. This model was fitted with good result to the obtained experimental data and the parameter that is most probably responsible for the strain effect was identified, as well as its dependence on Ge content in the SiGe layer.

Słowa kluczowe

EN

oxidation; kinetics; modeling; silicon; silicon-germanium

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 30--32
• Opis fizyczny: Bibliogr. 8 poz., rys.

Twórcy

autor

Grabowski J.

autor

Beck R. B.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland,

Bibliografia

• [1] D. J. Paul, “Silicon-germanium strained layer materials in microelectronics”, Adv. Mater., vol. 11, no. 3, pp. 191–194, 1999.
• [2] K. Rim, “Strained Si CMOS (SS CMOS) technology: opportunities and challenges”, Solid-State Electron., vol. 47, pp. 1133–1139, 2003.
• [3] E. H. C. Parker and T. E. Whall, “SiGe heterostucture CMOS circuits and applications”, Solid-State Electron., vol. 43, pp. 1497–1506, 1999.
• [4] R. B. Beck, “Modelowanie procesów utleniania krzemu”, Prace Naukowe Elektronika, z. 113. Warszawa: Oficyna Wydawnicza Politechniki Warszawskiej, 1995 (in Polish).
• [5] R. B. Beck and B. Majkusiak, “Kinetyka wzrostu cienkiego termicznego tlenku krzemu”. W: Mat. II Konf. Nauk. Technol. Elektron. ELTE’84, Rynia, Poland, 1984, s. 57–59 (in Polish).
• [6] R. B. Beck and B. Majkusiak, “The initial growth rate of thermal silicon oxide”, Phys. Stat. Sol., vol. 116, pp. 313–329, 1989.
• [7] R. B. Beck and B. Majkusiak, “The model of growth kinetics of very thin thermal silicon oxide layer”, Electron Technol., vol. 21, pp. 65–79, 1988.
• [8] B. E. Deal and A. S. Grove, “General relationships for the thermal oxidation of silicon”, J. Appl. Phys., vol. 36, pp. 3770–3778, 1965.