The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon

• Autorzy: Kalisz M. , Beck R. B. , Barcz A. , Ćwil M.
• Języki publikacji: EN

Abstrakty

EN

We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high-temperature thermal diffusion of boron into silicon. The polymeric layer formed on the etched surface appeared to consist of fluorine and silicon fluoride (SiOF and SiF). Concentration of these components changes depending on the parameters of RIE process, i.e., rf power, gas pressure and etching time. The composition of this polymeric layer affects, in turn, boron thermal diffusion into silicon. With increasing rf power, the depth of boron junction is increased, while increasing time of etching process reduces boron diffusion into silicon.

Słowa kluczowe

EN

fluorine; reactive ion etching; silicon fluoride; boron thermal diffusion; fluorocarbon plasma

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 25--29
• Opis fizyczny: Bibliogr.5 poz., rys., tab.

Twórcy

autor

Kalisz M.

autor

Beck R. B.

autor

Barcz A.

autor

Ćwil M.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland,

Bibliografia

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• [2] D. C. Marra and E. S. Aydii, “Effect of H2 addition on surface reaction during CF4/H2 plasma etching of silicon and silicon dioxide films”, J. Vac. Sci. Technol. A, vol. 15, no. 5, pp. 2508–2517, 1997.
• [3] Da Zhang, “Surface reaction mechanism in plasma etching process”, Ph.D. thesis, Department of Materials Science and Engineering, University of Illinois at Urbana-Champaingn, 2000.
• [4] H. A. W. El Mubarek and P. Ashburn, “Reduction of boron thermal diffusion in silicon by high energy fluorine implantation”, Appl. Phys. Lett., vol. 83, pp. 4134–4136, 2003.
• [5] K. Suzuki, H. Tasho, Y. Toda, and T. Yamazaki, “Effect of fluorine on boron diffusion into silicon dioxide”, J. Appl. Phys., vol. 77, pp. 417–419, 1995.