Comparison of composition of ultra-thin silicon oxynitride layers' fabricated by PECVD and ultrashallow rf plasma ion implantation

• Autorzy: Mroczyński R. , Bieniek T. , Beck R. B. , Ćwil M. , Konarski P. , Hoffman P. , Schmeißer D.
• Języki publikacji: EN

Abstrakty

EN

In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow nitrogen implantation followed by plasma oxidation and plasma enhanced chemical vapour deposition (PECVD). Chemical composition of silicon oxynitride layers was investigated by means of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The spectroscopic ellipsometry was used to determine both the thickness and refractive index of the obtained layers. The XPS measurements show considerable differences between the composition of the fabricated layers using each of the above mentioned methods. The SIMS analysis confirms XPS results and indicates differences in nitrogen distribution.

Słowa kluczowe

EN

ultra-thin dielectrics; oxynitride; SIMS; XPS; PECVD

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 20--24
• Opis fizyczny: Bibliogr. 8 poz., rys., tab.

Twórcy

autor

Mroczyński R.

autor

Bieniek T.

autor

Beck R. B.

autor

Ćwil M.

autor

Konarski P.

autor

Hoffman P.

autor

Schmeißer D.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland,

Bibliografia

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