Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes

• Autorzy: Bieniek T. , Beck R. B. , Jakubowski A. , Konarski P. , Ćwil M. , Hoffman P. , Schmeißer D.
• Języki publikacji: EN

Abstrakty

EN

Experiments presented in this work are a summary of the study that examines the possibility of fabrication of oxynitride layers for Si structures by nitrogen implantation from rf plasma only or nitrogen implantation from rf plasma followed immediately by plasma oxidation process. The obtained layers were characterized by means of: ellipsometry, XPS and ULE-SIMS. The results of electrical characterization of NMOS Al-gate test structures fabricated with the investigated layers used as gate dielectric, are also discussed.

Słowa kluczowe

EN

CMOS; gate stack; oxynitride; plasma implantation

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 9--15
• Opis fizyczny: Bibliogr. 9 poz., rys., tab.

Twórcy

autor

Bieniek T.

autor

Beck R. B.

autor

Jakubowski A.

autor

Konarski P.

autor

Ćwil M.

autor

Hoffman P.

autor

Schmeißer D.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland,

Bibliografia

• [1] International Technology Roadmap for Semiconductor, http://public.itrs.net
• [2] T. Chevolleau, A. Szekeres, and S. Alexandrova, “Oxidation of N implanted silicon: optical and structural properties”, Surf. Coat. Technol., vol. 151–152, pp. 281–284, 2002.
• [3] R. Rajkumer, M. Kumar, P. J. George, S. Mukherjee, and K. S. Chari, “Effects of nitrogen and argon plasma – immersion ion implantation on silicon and its oxidation”, Surf. Coat. Technol., vol. 156, iss. 1–3, pp. 253–257, 2002.
• [4] T. Bieniek, R. B. Beck, A. Jakubowski, and A. Kudła, “Formation of ultrathin oxide layers by low temperature oxidation in r.f. plasma”, Elektronika, vol. 10, pp. 6–7, 2004.
• [5] T. Bieniek, R. B. Beck, A. Jakubowski, and A. Kudła, “Study of extremely shallow nitrogen ions implantation in planar r.f. plasma reactors”, Elektronika, vol. 2-3, pp. 9–10, 2005.
• [6] T. Bieniek, R. Beck, A. Jakubowski, P. Hoffmann, D. Schmeisser, P. Konarski, and M. Cwil, “Formation of pedestal oxynitride layer by extremely shallow nitrogen implantation in planar r.f. plasma reactor”, ECS Trans., vol. 1, no. 5, pp. 407–419, 2006.
• [7] J. R. Shallenberger, M. J. Edgell, S. P. Smith, C. J. Hitzman, J. F. Kirchhoff, E. Principe, S. Biswas, R. J. Bleiler, W. Nieveen, and K. Jones, “Oxide thickness determination by XPS, AES, SIMS, RBS and TEM”, in Int. Conf. Ion Impl. Technol. Proc., Kyoto, Japan, 1998, vol. 1, pp. 79–82.
• [8] S. Tanuma, C. J. Powell, and D. R. Penn, “Calculations of electron inelastic mean free paths”, Surf. Interf. Anal., vol. 17, pp. 927–939, 1991.
• [9] J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectrons Spectroscopy. Eden Prairie: Perkin-Elmer Corp., 1992.