Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology

• Autorzy: Bieniek T. , Beck R. B. , Jakubowski A. , Głuszko G. , Konarski P. , Ćwil M.
• Języki publikacji: EN

Abstrakty

EN

The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.

Słowa kluczowe

EN

CMOS; dual gate oxide; gate stack; oxynitride; plasma implantation

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 3
• Strony: 3--8
• Opis fizyczny: Bibliogr. 8 poz., rys., tab.

Twórcy

autor

Bieniek T.

autor

Beck R. B.

autor

Jakubowski A.

autor

Głuszko G.

autor

Konarski P.

autor

Ćwil M.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland,

Bibliografia

• [1] International Technology Roadmap for Semiconductor, http://public.itrs.net
• [2] T. Chevolleau, A. Szekeres, and S. Alexandrova, “Oxidation of N implanted silicon: optical and structural properties”, Surf. Coat. Technol.,vol. 151–152, pp. 281–284, 2002.
• [3] R. Rajkumer, M. Kumar, P. J. George, S. Mukherjee, and K. S. Chari, “Effects of nitrogen and argon plasma – immersion ion implantation on silicon and its oxidation”, Surf. Coat. Technol., vol. 156, no. 1–3, pp. 253–257, 2002.
• [4] T. Bieniek, R. B. Beck, A. Jakubowski, and A. Kudła, “Formation of ultra-thin oxide layers by low temperature oxidation in r.f. plasma”, Elektronika, vol. 10, pp. 6–7, 2004.
• [5] T. Bieniek, R. B. Beck, A. Jakubowski, and A. Kudła, “Study of extremely shallow nitrogen ions implantation in planar r.f. plasma reactors”, Elektronika, vol. 2–3, pp. 9–10, 2005.
• [6] T. Bieniek, A. Wojtkiewicz, L. Łukasiak, and R. B. Beck, “Silicon dioxide as passivating, ultrathin layer in MOSFET gate stacks”, J. Wide Bandgap Mater., vol. 8, no. 3–4, pp. 201–209, 2002.
• [7] T. Bieniek, R. Beck, A. Jakubowski, P. Hoffmann, D. Schmeisser, P. Konarski, and M. Cwil, “Formation of pedestal oxynitride layer by extremely shallow nitrogen implantation in planar r.f. plasma reactor”, ECS Trans., vol. 1, no. 5, pp. 407–419, 2006.
• [8] B. Majkusiak and A. Jakubowski, “A technical formula for determining the insulator capacitance in a MOS structure”, Solid State Electron., vol. 35, no. 2, pp. 223–224, 1992.