On-wafer wideband characterization: a powerful tool for improving the IC technologies

• Autorzy: Lederer D. , Raskin J. P.
• Języki publikacji: EN

Abstrakty

EN

In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage - SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.

Słowa kluczowe

EN

silicon-on-insulator (SOI); MOSFET; wideband characterization; microwave frequency; extraction techniques; small-signal equivalent circuit

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 2
• Strony: 69--77
• Opis fizyczny: Bibliogr. 18 poz., rys.

Twórcy

autor

Lederer D.

autor

Raskin J. P.

• Microwave Laboratory, Université catholique de Louvain (UCL), Place du Levant, 3 B-1348 Louvain-la-Neuve, Belgium,

Bibliografia

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