Development of 3C-SiC MOSFETs

• Autorzy: Bakowski M. , Schöner A. , Ericsson P. , Strömberg H. , Nagasawa H. , Masayuki A.
• Języki publikacji: EN

Abstrakty

EN

The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size from single cell to 3×3 mm2 large devices are reviewed. The vertical devices had hexagonal and square unit cell designs with 2 žm and 4 žm channel length. The p-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti/W contacts were evaluated.

Słowa kluczowe

EN

vertical MOSFET; 3C-SiC; channel mobility

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 2
• Strony: 49--56
• Opis fizyczny: Bibliogr. 14 poz., rys., tab.

Twórcy

autor

Bakowski M.

autor

Schöner A.

autor

Ericsson P.

autor

Strömberg H.

autor

Nagasawa H.

autor

Masayuki A.

• Acreo AB, Electrum 236, SE-164 40 Kista-Stockholm, Sweden,

Bibliografia

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• [13] K. Yagi, T. Kawahara, N. Hatta, and H. Nagasawa, “Reducing planar defects in 3C-SiC”, Mater. Sci. Forum, vol. 527–529, pp. 291–294, 2006.
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