Semiconductor cleaning technology for next generation material systems

• Autorzy: Ruzyllo J.
• Języki publikacji: EN

Abstrakty

EN

This paper gives a brief overview of the challenges wafer cleaning technology is facing in the light of advanced silicon technology moving in the direction of non-planar device structures and the need for modified cleans for semiconductors other than silicon. In the former case, the key issue is related to cleaning and conditioning of vertical surfaces in next generation CMOS gate structure as well as deep 3D geometries in MEMS devices. In the latter, an accelerated pace at which semiconductors other than silicon are being introduced into the mainstream manufacturing calls for the development of material specific wafer cleaning technologies. Examples of the problems related to each challenge are considered.

Słowa kluczowe

EN

III-V compounds; FinFET; IC manufacturing; MEMS; MOS gate stack; semiconductor cleaning

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 2
• Strony: 44--48
• Opis fizyczny: Bibliogr.17 poz., rys., fot.

Twórcy

autor

Ruzyllo J.

• Department of Electrical Engineering, Penn State University, University Park, PA 16802, USA,

Bibliografia

• [1] W. Kern and D. Puotinen, “Cleaning solution based on hydrogen peroxide for use in semiconductor technology”, RCA Rev., vol. 31, pp. 187–206, 1970.
• [2] J. Ruzyllo, “Second look at role of dry water cleaning technology”, in Proc. Symp. Contam. Free Manuf. SEMICON West 1998, San Francisco, USA, 1998, pp. L1–L6.
• [3] K. Endo, S. Noda, M. Masahara, T. Kubota, T. Ozaki, S. Samukawa, Y. Liu, K. Ishii, Y. Ishikawa, E. Sugimata, T. Matsukawa, H. Takashima, H. Yamauchi, and E. Suzuki, “Fabrication of Fin- FETs by damage-free neutral-beam etching technology”, IEEE Trans. Electron Dev., vol. 53, pp. 1826–1833, 2006.
• [4] J. P. Campbell, “Analysis of sidewall cleans relating to titanium salicide filaments”, IEEE Trans. Semicond. Manuf., vol. 17, pp. 603–611, 2004.
• [5] C. T. Wu, R. S. Ridley Sr., G. Dolny, T. Grebs, C. Knoedler, S. Suliman, B. Venkataraman, O. Awadelkarim, and J. Ruzyllo, “Growth and reliability of thick gate oxide in U-trench for power MOSFET’s”, in Proc. 14th Int. Symp. Pow. Semicond. Dev. ICs, Osaka, Japan, 2002, pp. 149–153.
• [6] J. Ruzyllo, K. Torek, C. Daffron, R. Grant, and R. Novak, “Etching of thermal oxides in low-pressure anhydrous HF/CH3OH gas mixture at elevated temperature”, J. Electrochem. Soc., vol. 140, pp. L64–L67, 1993.
• [7] M. Erdamar, “Studies of MEMS release processes using anhydrous HF/methanol mixtiure”. M.S. thesis, Penn State University, 2005.
• [8] R. B. Farmer, B. D. Jones, K. P. Gupta, I. H. Jafri, and D. M. Dispensa, “Supercritical phase water drying/cleaning system”, US Patent 6,067,728, May 30, 2000.
• [9] K. Torek, J. Ruzyllo, R. Grant, and R. Novak, “Reduced pressure etching of thermal oxides in anhydrous HF/alcoholic gas mixtures”, J. Electrochem. Soc., vol. 142, pp. 1322–1328, 1995.
• [10] J. Ruzyllo, D. Frystak, and R. Bowling, “Dry cleaning procedure for silicon IC fabrication”, in IEEE Int. Electron. Dev. Meet. IEDM Tech. Dig., Washington, USA, 1990, pp. 409–412.
• [11] N. Wu, Q. Zhang, D. S. Chan, N. Balasubramanian, and C. Zhu, “Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation”, IEEE Electron Dev. Lett., vol. 27, pp. 479–481, 2006.
• [12] S. J. Whang, S. J. Lee, F. Gao, N. Wu, C. X. Zhu, J. S. Pan, L. J. Tang, and D. L. Kwong, “Germanium p- and n-MOSFETs fabricated with novel surface passivation (plasma-PH3 and thin AlN) and TaN/HfO2 gate stack”, in IEEE Int. Electron Dev. Meet. IEDM Tech. Dig., San Francisco, USA, 2004, pp. 307–310.
• [13] S. Sioncke, M. Lux, W. Fyen, M. Meuris, P. Mertens, and A. Theuwis, “Particle deposition and removal from Ge surfaces”, in 8th Int. Symp. Ultra Clean Proces. Semicond. Surf. UCPSS 2006, Antwerp, Belgium, 2006.
• [14] J. Kim, K. Saraswat, and Y. Nishi, “Study of germanium surface in wet chemical solutions for surface cleaning applications”, ECS Trans., vol. 1, pp. 214–219, 2005.
• [15] J. Kim, K. McVittie, K. Saraswat, and Y. Nishii, “Passivation studies of germanium surface”, in 8th Int. Symp. Ultra Clean Proces. Semicond. Surf. UCPSS 2006, Antwerp, Belgium, 2006.
• [16] S. Sioncke, B. Onsia, K. Struys, J. Rip, R. Vos, M. Meuris, P. Mertens, and A. Theuwis, “Metal deposition on Ge surfaces”, ECS Trans., vol. 1, pp. 220–227, 2005.
• [17] K. Chang, T. Witt, A. Hoff, R. Woodin, R. Ridley, G. Dolny, K. Shanmugasundaram, E. Oborina, and J. Ruzyllo, “Surface roughness in silicon carbide technology”, ECS Trans., vol. 1, pp. 228–233, 2005.