Review and perspective of high-k dielectrics on silicon

• Autorzy: Hall S. , Buiu O. , Mitrovic I. Z. , Lu Y. , Davey W. M.
• Języki publikacji: EN

Abstrakty

EN

The paper reviews recent work in the area of high-k dielectrics for application as the gate oxide in advanced MOSFETs. Following a review of relevant dielectric physics, we discuss challenges and issues relating to characterization of the dielectrics, which are compounded by electron trapping phenomena in the microsecond regime. Nearly all practical methods of preparation result in a thin interfacial layer generally of the form SiOx or a mixed oxide between Si and the high-k so that the extraction of the dielectric constant is complicated and values must be qualified by error analysis. The discussion is initially focussed on HfO2 but recognizing the propensity for crystallization of that material at modest temperatures, we discuss and review also, hafnia silicates and aluminates which have the potential for integration into a full CMOS process. The paper is concluded with a perspective on material contenders for the "end of road map" at the 22 nm node.

Słowa kluczowe

EN

high-k dielectrics; dielectric constant; hafnia; interfacial layer; aluminates; silicates

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 2
• Strony: 33--43
• Opis fizyczny: Bibliogr. 57 poz., rys.

Twórcy

autor

Hall S.

autor

Buiu O.

autor

Mitrovic I. Z.

autor

Lu Y.

autor

Davey W. M.

• Department of Electrical Engineering and Electronics, Brownlow Hill, University of Liverpool, Liverpool L69 3GJ, UK,

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