SiGe HBT wideband amplifier for millimeter wave applications

• Autorzy: Krcmar M. , Noether N. , Boeck G.
• Języki publikacji: EN

Abstrakty

EN

A wideband amplifier up to 50 GHz has been implemented in a 0.25 žm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.

Słowa kluczowe

EN

wideband amplifier; HBT; SiGe; millimeter wave; bipolar integrated circuits

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2007
• Tom: nr 1
• Strony: 8--12
• Opis fizyczny: Bibliogr. 9 poz., rys., tab.

Twórcy

autor

Krcmar M.

autor

Noether N.

autor

Boeck G.

• Technische Universität Berlin, Microwave Engineering Lab, Sekr. HFT 5-1, Einsteinufer 25, 10587 Berlin, Germany,

Bibliografia

• [1] J. D. Cressler, “SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications”, IEEE Trans. Microw. Theory Techn., vol. 46, issue 5, pp. 572–589, 1998.
• [2] L. Jongsoo and J. D. Cressler, “A 3–10 GHz SiGe resistive feedback low noise amplifier for UWB applications”, in Symp. Radio Freq. Integr. Circ. RFIC, Long Beach, USA, 2005, pp. 545–548.
• [3] H. Knapp, D. Zoschg, T. Meister, K. Aufinger, S. Boguth, and L. Treitinger, “15 GHz wideband amplifier with 2.8 dB noise figure in SiGe bipolar technology”, in Symp. Radio Freq. Integr. Circ. RFIC, Phoenix, USA, 2001, pp. 287–290.
• [4] B. Heinemann et al., “Novel collector design for high-speed SiGe:C HBTs”, in IEEE Int. Electron Dev. Meet. IEDM, San Francisco, USA, 2002, p. 775.
• [5] H. Rücker et al., “SiGe:C BiCMOS technology with 3.6 ps gate delay”, in IEEE Int. Electron Dev. Meet. IEDM, Washington, USA, 2003, p. 121.
• [6] M. Gordon and S. P. Voinigescu, “An inductor-based 52-GHz 0.18 μm SiGe HBT cascode LNA with 22 dB gain”, in Solid-State Circ. Conf. ESSCIRC, Leuven, Belgium, 2004, pp. 287–290.
• [7] Q. Liang, G. Niu, J. D. Cressler, S. Taylor, and D. L. Harame, “Geometry and bias current optimization for SiGe HBT cascode low-noise amplifiers”, in IEEE MTT-S Int. Microw. Symp. Dig., Seattle, USA, 2002, vol. 1, pp. 517–520.
• [8] G. E. Ponchak, E .M. Tentzeris, and J. Papapolymerou, “Coupling between microstrip lines embedded in polyimide layers for 3D-MMICs on Si”, in IEE Proc. Microw. Anten. Propagat., vol. 150, issue 5, pp. 344–350, 2003.
• [9] N. Shiramizu, T. Masuda, M. Tanabe, and K. Washio, “A 3–10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25-pm SiGe BiCMOS technology”, in Symp. Radio Freq. Integr. Circ. RFIC, Long Beach, USA, 2005, pp. 39–42.