Domieszkowanie monokryształów antymonku galu na typ przewodnictwa n oraz na typ p

Mirowska, A.; Orłowski, W.

Artykuł - szczegóły

Tytuł artykułu

Domieszkowanie monokryształów antymonku galu na typ przewodnictwa n oraz na typ p

Autorzy

Mirowska A. , Orłowski W.

Treść / Zawartość

Pełne teksty:

httpwww_bg_utp_edu_plartme20nr2012010me12010mirowska.pdf

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Warianty tytułu

Doping gallium antimonide single crystals for n-type and p-type conductivity

Języki publikacji

Abstrakty

Monokryształy antymonku galu domieszkowane na typ przewodnictwa n oraz na typ p orientacji < 100 > otrzymane zostały zmodyfikowaną metodą Czochralskiego zintegrowaną z syntezą in-situ. Zbadano wpływ parametrów technologicznych na skuteczność procesu domieszkowania i dobrano parametry w celu otrzymania monokryształów o pożądanym typie przewodnictwa oraz koncentracji nośników. Uzyskano monokryształy GaSb typu n (domieszkowane tellurem) o koncentracji nośników w zakresie od 1 x 10[indeks górny]17 do 1 x 10[indeks górny]18 cm. Otrzymane monokryształy GaSb typu p posiadały koncentrację w zakresie od 4 x 10[indeks górny]17 do 2 x 10[indeks górny]19 cm³ (domieszkowane krzemem) oraz koncentrację od 2 x 10[indeks górny]18 do 1 x 10[indeks górny]19 cm³ (domieszkowane cynkiem). Zbadano wpływ koncentracji domieszki (Te, Zn, Si), jak też sposobu jej wprowadzania (Si), na własności elektryczne otrzymanych kryształów.

Gallium antimonide (GaSb) single crystals with n--type or p-type conductivity were grown by modified Czochralski method integrated with in-situ synthesis. The influence of technological parameters on doping process and its effectivity was investigated. Tellurium doped n-type GaSb single crystals were obtained with carrier concentration from 1 x 10[sup]17 to 1 x 10[sup]18 cm-³. GaSb p-type single crystals were obtained with carrier concentration from 4 x 10[sup]17 to 2 x 10[19] cm-³ (Si-doped) and from 2 x 10[sup]18 to 1 x 10[sup]19 cm-³ (Zn-doped). Dopant concentration was estimated by GDMS analysis.

Słowa kluczowe

GaSb metoda Cz Te Si Zn koncentracja domieszek GDMS

GaSb Cz method doping Te Si Zn dopant concentration GDMS

Wydawca

Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych

Czasopismo

Materiały Elektroniczne

Rocznik

2010

Tom

T. 38, nr 1

Strony

17--32

Opis fizyczny

Bibliogr. 57 poz., wykr.

Twórcy

autor

Mirowska A.

autor

Orłowski W.

Instytut Technologii Materiałów Elektronicznych, ul. Wólczyńska 133, 01-919 Warszawa, mirowska@itme.edu.pl

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