Effects of stress annealing on the electrical and the optical properties of MOS devices

• Autorzy: Rzodkiewicz W. , Kudła A. , Rawicki Z. , Przewłocki H. M.
• Języki publikacji: EN

Abstrakty

EN

In this paper we show the results of a study of the effects of high-temperature stress annealing in nitrogen on the refraction index of SiO2 layers and electrical properties in metal-oxide-semiconductor (MOS) devices. We have experimentally characterized the dependence of the reduced effective contact potential difference (ECPD), the effective oxide charge density (Neff), and the mid-gap interface trap density (Dit) on the annealing conditions. Subsequently, we have correlated such properties with the dependence of the refraction index and oxide stress on the annealing conditions and silicon dioxide thickness. Also, the dependence of mechanical stress in the Si-SiO2 system on the oxidation and annealing conditions has been experimentally determined. We consider the contributions of the thermal-relaxation and nitrogen incorporation processes in determining changes in the SiO2 layer refractive index and the electrical properties with annealing time. This description is consistent with other annealing studies carried out in argon, where only the thermal relaxation process is present.

Słowa kluczowe

EN

stress; MOS; Si-SiO2 system; electrical parameters; refractive index

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2005
• Tom: nr 1
• Strony: 115--119
• Opis fizyczny: Bibliogr. 15 poz., il.

Twórcy

autor

Rzodkiewicz W.

• Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland

autor

Kudła A.

• Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland

autor

Rawicki Z.

• Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland

autor

Przewłocki H. M.

• Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland

Bibliografia

• [1] E. H. Nicollian and J. R. Brews, MOS Physics and Technology. New York: Wiley, 1982.
• [2] H. M. Przewłocki and H. Z. Massoud, "Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO2 interface of metal-oxide-semiconductor devices", J. Appl. Phys., vol. 92, pp. 2198-2201, 2002.
• [3] H. Z. Massoud and H. M. Przewłocki, "Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices", J. Appl. Phys., vol. 92, pp. 2202-2206, 2002.
• [4] W. Primak and D. Post, "Photoelastic constants of vitreous silica and its elastic coeffcient of refractive index", J. Appl. Phys., vol. 30, pp. 779-789, 1959.
• [5] G. Ghibaudo, "Modeling of silicon oxidation based on stress relaxation", Phil. Mag., vol. B 55, pp. 147-158, 1987.
• [6] A. Szekeres, "Stress in the SiO2/Si structures formed by thermal oxidation", in Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices. Dordrecht: Kluwer, 1998, pp. 65-78.
• [7] B. Leroy, "Stresses and silicon interstitials during the oxidation of a silicon substrate", Phil. Mag., vol. B 55, pp. 159-199, 1987.
• [8] C. M. Herzinger, B. Yohs, W. A. McGahan, and J. A. Woollam, "Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation ", J. Appl. Phys., vol. 83, pp. 3323-3336, 1998.
• [9] A. Brenner and S. Senderoff, "Calculation of stress in electrodeposits from the curvature of plated strip", J. Res. Nat. Bur. Stand., vol. RP 1954, no. 42, pp. 105-123, 1949.
• [10] B. Leroy, "Passivation-induced phenomena in silicon substrate" in Instabilities in Silicon Devices. Amsterdam: North Holland, 1986, pp. 155-210.
• [11] P. H. Townsend, D. M. Barnett, and T. A. Brenner, "Elastic relationship in layered composite media with approximation for the case of thin films on a thick substrate", J. Appl. Phys., vol. 62, pp. 4438-4444, 1987.
• [12] C. A. Klein, "How accurate are Stoney's equation and recent modifications", J. Appl. Phys., vol. 88, pp. 5487-5489, 2000.
• [13] W. A. Brantley, "Calculated elastic constants for stress problems associated with semiconductor devices", J. Appl. Phys., vol. 44, pp. 534-535, 1973.
• [14] Tencor FLX-2320 Thin Film Stress Measurement, User Manual, Rev. B, 1995.
• [15] H. M. Przewłocki, "Theory and applications of internal emission in the MOS system at low electric fields", Solid-State Electron., vol. 45, pp. 1241-1250, 2001.