Photoelectric measurements of the local values of the effective contact potential difference in the MOS structure

• Autorzy: Kudła A. , Przewłocki H. , Brzezińska D. , Borowicz L.
• Języki publikacji: EN

Abstrakty

EN

We have shown that using focused UV laser beam in photoelectric methods it is possible to measure local phi MS values over the gate area of a single MOS structure. The phi MS distribution is such that its values are highest far away from the gate edges regions, lower in the vicinity of gate edges and still lower in the vicinity of gate corners. Examples of measurement results and description of the measurement system are presented. The dependence of the phi MS value on the exposure time and the power density of UV light is discussed.

Słowa kluczowe

EN

MIS structure; photoelectrical methods; internal photoemission; contact potential difference

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2005
• Tom: nr 1
• Strony: 112--114
• Opis fizyczny: Bibliogr. 5 poz., il.

Twórcy

autor

Kudła A.

• Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland

autor

Przewłocki H.

• Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland

autor

Brzezińska D.

• Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland

autor

Borowicz L.

• Institute of Electron Technology Lotników av. 32/46 02-668 Warsaw, Poland

Bibliografia

• [1] C. H. Bjorkman, J. T. Fitch, and G. Lucovsky, "Correlation between midgap interface state density and thickness-averaged oxide stress and strain at SiO2 interfaces formed by thermal oxidation of Si", Appl. Phys. Lett., vol. 56, pp. 1983-1985, 1990.
• [2] S. M. Hu, "Stress related problems in silicon technology", J. Appl. Phys., vol. 70, pp. R53-R80, 1991.
• [3] I. De Wolf, H. E. Maes, and S. K. Jones, "Stress measurements in silicon devices through Raman spectroscopy: bridging the gap between theory and experiment", J. Appl. Phys., vol. 79, pp. 7148-7156, 1996.
• [4] K. F. Dombrowski, I. De Wolf, and B. Dietrich, "Stress measurements using ultraviolet micro-Raman spectroscopy", Appl. Phys. Lett., vol. 75, pp. 2450-2451, 1999.
• [5] H. M. Przewłocki, "The importance, the nature and the measurements methods of the fMS factor in MOS structures", Electron Technol., vol. 27, no. 1, pp. 27-42, 1994.