DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content

• Autorzy: Durov S. , Mironov O. A. , Myronov M. , Whall T. E. , Parker E. H. C. , Hackbarth T. , Hoeck G. , Herzog H. J. , König U. , Känel von H.
• Języki publikacji: EN

Abstrakty

EN

Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.

Słowa kluczowe

EN

SiGe; metamorphic MOSFET; LF-noise; I-V; C-V; effective hole mobility

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2005
• Tom: nr 1
• Strony: 101--111
• Opis fizyczny: Bibliogr. 20 poz., il.

Twórcy

autor

Durov S.

• Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

autor

Mironov O. A.

• Department of Physics University of Warwick Coventry CV4 7AL, United Kingdom

autor

Myronov M.

• Department of Physics University of Warwick Coventry CV4 7AL, United Kingdom

autor

Whall T. E.

• Department of Physics University of Warwick Coventry CV4 7AL, United Kingdom

autor

Parker E. H. C.

autor

Hackbarth T.

• DaimlerChrysler Research Center Wilhelm-Runge Str. 11 D-89081 Ulm, Germany

autor

Hoeck G.

• Siemens AG Lise-Meitner-Str. 5 D-89081 Ulm, Germany

autor

Herzog H. J.

• DaimlerChrysler Research Center Wilhelm-Runge Str. 11 D-89081 Ulm, Germany

autor

König U.

• DaimlerChrysler Research Center Wilhelm-Runge Str. 11 D-89081 Ulm, Germany

autor

Känel von H.

• INFM and L-NESS Dipartmento di Fisica Politecnico di Milano via Anzani 52 I-22100 Como, Italy

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