TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology

• Autorzy: Barański M. , Domański K. , Grabiec P. , Grodner M. , Jaroszewicz B. , Kociubiński A. , Kucewicz W. , Kucharski K. , Marczewski J. , Niemiec H. , Sapor M. , Tomaszewski D.
• Języki publikacji: EN

Abstrakty

EN

This paper reports a test structure for characterization of a new technology combining a standard CMOS process with pixel detector manufacturing technique. These processes are combined on a single thick-_lm SOI wafer. Preliminary results of the measurements performed on both MOS SOI transistors and dedicated SOI test structures are described in detail.

Słowa kluczowe

EN

SOI CMOS technology; pixel detector; test structure

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2005
• Tom: nr 1
• Strony: 85--93
• Opis fizyczny: Bibliogr. 6 poz., il.

Twórcy

autor

Barański M.

• AGH University of Science and Technology, A. Mickiewicza st 30, 30-059 Kraków, Poland

autor

Domański K.

• Institute of Electron Technology Lotników av. 32/46 02-668 Warsaw, Poland

autor

Grabiec P.

• Institute of Electron Technology Lotników av. 32/46 02-668 Warsaw, Poland

autor

Grodner M.

• Institute of Electron Technology Lotników av. 32/46 02-668 Warsaw, Poland

autor

Jaroszewicz B.

• Institute of Electron Technology Lotników av. 32/46 02-668 Warsaw, Poland

autor

Kociubiński A.

• Institute of Electron Technology Lotników av. 32/46 02-668 Warsaw, Poland

autor

Kucewicz W.

• AGH University of Science and Technology, A. Mickiewicza st 30, 30-059 Kraków, Poland

autor

Kucharski K.

• Institute of Electron Technology Lotników av. 32/46 02-668 Warsaw, Poland

autor

Marczewski J.

• Institute of Electron Technology Lotników av. 32/46 02-668 Warsaw, Poland

autor

Niemiec H.

• AGH University of Science and Technology A. Mickiewicza st 30 30-059 Kraków, Poland

autor

Sapor M.

• AGH University of Science and Technology A. Mickiewicza st 30 30-059 Kraków, Poland

autor

Tomaszewski D.

• Institute of Electron Technology Lotników av. 32/46 02-668 Warsaw, Poland

Bibliografia

• [1] M. Caccia et al., "Silicon ultra fast cameras for electron and gamma sources in medical applications", in 8th Top. Sem. Innov. Part. Radiat. Detec., Siena, Italy, 2002 (Nucl. Phys. B { Proc. Suppl., vol. 125, pp. 133-138, 2003).
• [2] J. Marczewski et al., "Monolithic silicon pixel detectors in SOI technology", in Lin. Coll. Worksh., Prague, Czech Republic, 2002, http://hep2.fzu.cz/ecfadesy/Talks/ Vertex Detector.
• [3] H. Niemiec et al., "Technology development for silicon monolithic pixel sensor in SOI technology", in 10th Int. Conf. MIXDES, Łódź, Poland, 2003, pp. 508-511.
• [4] D. Tomaszewski et al., "A versatile tool for MOSFETs parameters extraction", in 6th Symp. Diagn. & Yield, Warsaw, Poland, 2003.
• [5] M. Sadowski and D. Tomaszewski, "An effcient approach to the measurement and characterization of MOSFETs capacitances", Microelectron. Reliab., vol. 40, pp. 1045{1049, 2000.
• [6] J. Zając et al. "Semi-automatic test system for characterisation of ASIC/MPWs", in 6th Symp. Diagn. & Yield, Warsaw, Poland, 2003.