Properties of Al contacts to Si surface exposed in the course of plasma etching of previously grown nanocrystalline c-BN film

• Autorzy: Firek P. , Werbowy A. , Szmidt J. , Olszyna A. R.
• Języki publikacji: EN

Abstrakty

EN

Properties of Al electric contacts to Si(p) surface exposed to fluorine-based plasma etching of nanocrystalline cubic boron nitride (c-BN) film grown previously were studied and compared to the properties of Al contacts fabricated on pristine or dry etched surface of Si(p) wafers. In addition, a part of the investigated samples was annealed in nitrogen atmosphere at the temperature of 673 K. Analysis of contract properties is based on current-voltage (I-V) measurements of the produced Al-Si structures. The presented investigations were performed in order to evaluate the efficiency of the applied plasma etching method of nanocrystalline c-BN from the viewpoint of its influence on the properties of metal contacts formed subsequently and thus on the performance of electronic devices involving the use of boron nitride.

Słowa kluczowe

EN

cubic boron nitride; plasma etching; electric contacts

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2005
• Tom: nr 1
• Strony: 76--80
• Opis fizyczny: Bibliogr. 12 poz., il., tab.

Twórcy

autor

Firek P.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland

autor

Werbowy A.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland

autor

Szmidt J.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland

autor

Olszyna A. R.

• Faculty of Materials Science and Engineering Warsaw University of Technology Wołoska st 141 02-507 Warsaw, Poland

Bibliografia

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