Low frequency noise in advanced Si bulk and SOI MOSFETs

• Autorzy: Jomaah J. , Balestra F. , Ghibaudo G.
• Języki publikacji: EN

Abstrakty

EN

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are presented and illustrated through experimental data obtained on advanced CMOS SOI and Si bulk generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown. The main physical characteristics of random telegraph signals (RTS) observed in small area MOS transistors are reviewed. Experimental results obtained on 0.35-0.12 žm CMOS technologies are used to predict the trends for the noise in future CMOS technologies, e.g., 0.1 žm and beyond. For SOI MOSFETS, the main types of layout will be considered, that is floating body, DTMOS, and body-contact. Particular attention will be paid to the floating body effect that induces a kink-related excess noise, which superimposes a Lorentzian spectrum on the flicker noise.

Słowa kluczowe

EN

CMOS; SOI; low frequency noise; kink-related excess noise; DTMOS

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2005
• Tom: nr 1
• Strony: 24--33
• Opis fizyczny: Bibliogr. 38 poz., il.

Twórcy

autor

Jomaah J.

• IMEP-ENSERG (CNRS-INPG-UJF), 23 rue des Martyrs, BP. 257, 38016 Grenoble cedex 1, France

autor

Balestra F.

• IMEP-ENSERG (CNRS-INPG-UJF), 23 rue des Martyrs, BP. 257, 38016 Grenoble cedex 1, France

autor

Ghibaudo G.

• IMEP-ENSERG (CNRS-INPG-UJF), 23 rue des Martyrs, BP. 257, 38016 Grenoble cedex 1, France

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