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Effect of doping on time-of-flight transient currents in twin crystalline layers: a Monte-Carlo study

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Języki publikacji
EN
Abstrakty
EN
In the paper we present the results of the Monte Carlo simulations of time-of-flight transient currents in hopping systems containing various, concentrations of transport-active centres placed in an inert matrix, and doped with various concentrations of additional transport-active centres, characterised by a different ionisation potential than the host transport centres. Such hopping centre distribution can be found in molecularly doped organic crystals. The carriers are allowed to jump between localised states of two kinds: the host transport sites of concentration c/sub 0/, and the additional doping sites of concentration c/sub d/. We deal only with the dependence of the carrier mobility on doping level, and on the difference of ionisation potentials between the host and dopant centres, at fixed external field and temperature. The results of simulations performed for various dopings, and various hopping sites distributions in energy, are discussed. The carrier jump statistics is discussed in detail.
Rocznik
Strony
33--48
Opis fizyczny
Bibliogr. 8 poz., rys.
Twórcy
autor
  • Department of Solid State Physics, Faculty of Technical Physics and Applied Mathematics, Gdańsk University of Technology, Narutowicza 11/12, 80-952 Gdańsk, Poland
Bibliografia
  • [1] Borsenberger P M, Gruenbaum W T, WolfU i Bassler H 1997 Chem. Phys. 234 277
  • [2] Emoto N and Kotani M 1983 Chem. Phys. Lett. 101 386
  • [3] Kao K C and Hwang W 1981 Electrical Transport in Solids, Oxford, Pergamon
  • [4] Leal Ferreira G F 1977 Phys. Rev. B 16 4719
  • [5] Marc N, Moisan J Y. Andre B and Lever R 1996 Phil. Mag. B 74 93
  • [6] Ries B and Bassler H 1987 Phys. Rev. B 35 2295
  • [7] Rybicki J, Trzebiatowski K, Witkowska A and Feliziani S 1998 Proc. lnt. Symp. on Trends in Continuum Physics, TRECOP’98, August 17-20, Poznan, Poland)
  • [8] Wolf U, Bassler H, Borsenberger P M i Grunebaum W T 1997 Chem. Phys. 222 259
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BAT3-0016-0062
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